Ionized nitrogen doped Si-C thin films at 200°C substrate temperature were obtained by Thermionic Vacuum Arc (TVA) method. To increase the energy of N, C and Si ions, -400V, -600V and -1000V negative bias voltages was applied on the substrate. The 400nm, 600nm and 1000nm N-SiC coatings on glass was deposed. To characterize the structure of as-prepared N-SiC coatings, Transmission Electron Microscopy (TEM), High Resolution Transmission Electron Microscopy (HRTEM), X-Ray and Photoelectron Spectroscopy (XPS) techniques was performed. Electrical conductivity was measured comparing the potential drop on the structure with the potential drop on a series standard resistance in a constant current mode. To justify the dependence of measured electrical conductivity by the temperature, we assume a thermally activated electrical transport mechanism.
Victor Ciupina, Cristian P. Lungu, Rodica Vladoiu, Gabriel C. Prodan, Stefan Antohe, Corneliu Porosnicu, Iuliana Stanescu, Ionut Jepu, Sorina Iftimie, Marius Belc, Aurelia Mandes, Virginia Dinca, Eugeniu Vasile, Valeriu Zarovski, Virginia Nicolescu, and Aureliana Caraiane, "Structural and electrical properties of N doped SiC nanostructures obtained by TVA method," Proc. SPIE 9558, Nanostructured Thin Films VIII, 955808 (Presented at SPIE Nanoscience + Engineering: August 12, 2015; Published: 20 August 2015); https://doi.org/10.1117/12.2187362.
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