From Event: SPIE Optics + Photonics for Sustainable Energy, 2015
Optical properties of silicon nanocrystals dispersed in SiO2 matrix were investigated in terms of photoluminescence
quantum yield at room temperature. Two multilayer samples, prepared from substoichiometric silicon oxide layers by
annealing at 1150°C were used to investigate the influence of Si concentration. Significant reduction of
photoluminescence quantum yield and a very specific change of its excitation energy dependence upon variation of
silicon excess are concluded from the experimental data. Possible mechanisms leading to these changes are discussed.
© 2015 COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Nguyen Xuan Chung, Rens Limpens, and Tom Gregorkiewicz, "Investigating photoluminescence quantum yield of silicon nanocrystals formed in SiOx with different initial Si excess," Proc. SPIE 9562, Next Generation Technologies for Solar Energy Conversion VI, 95620O (Presented at SPIE Optics + Photonics for Sustainable Energy: August 12, 2015; Published: 4 September 2015); https://doi.org/10.1117/12.2191105.
