From Event: SPIE Organic Photonics + Electronics, 2015
Organic light-emitting diodes (OLEDs) are well studied and established in current display applications. Light-emitting transistors (LETs) have been developed to further simplify the necessary circuitry for these applications, combining the switching capabilities of a transistor with the light emitting capabilities of an OLED. Such devices have been studied using mono- and bilayer geometries and a variety of polymers , small organic molecules  and single crystals  within the active layers. Current devices can often suffer from low carrier mobilities and most operate in p-type mode due to a lack of suitable n-type organic charge carrier materials. Hybrid light-emitting transistors (HLETs) are a logical step to improve device performance by harnessing the charge carrier capabilities of inorganic semiconductors .
We present state of the art, all solution processed hybrid light-emitting transistors using a non-planar contact geometry [1, 5]. We will discuss HLETs comprised of an inorganic electron transport layer prepared from a sol-gel of zinc tin oxide and several organic emissive materials. The mobility of the devices is found between 1-5 cm2/Vs and they had on/off ratios of ~105. Combined with optical brightness and efficiencies of the order of 103 cd/m2 and 10-3-10-1 %, respectively, these devices are moving towards the performance required for application in displays.
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Khalid Muhieddine, Mujeeb Ullah, Ebinazar B. Namdas, and Paul L. Burn, "Hybrid light emitting transistors (Presentation Recording)," Proc. SPIE 9568, Organic Field-Effect Transistors XIV; and Organic Sensors and Bioelectronics VIII, 956807 (Presented at SPIE Organic Photonics + Electronics: August 10, 2015; Published: 5 October 2015); https://doi.org/10.1117/12.2187005.4519371848001.
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