From Event: SPIE Organic Photonics + Electronics, 2015
Diodes containing a layer of aluminum oxide combined with a layer of π-conjugated polymer show nonvolatile memory
effects after they have been electroformed. Electroforming is induced by application high bias voltage close to the limit
for dielectric breakdown and can be performed reliably and with high yield on organic-inorganic hybrid diodes with
controlled oxide thickness. Here we investigate the initial stage of the electroforming process and show through
temperature dependent current-voltage characterization that electrons are trapped in deep traps at the interface between
π-conjugated polyspirofluorene polymer and the aluminum oxide.
Benjamin F. Bory, Paulo Rocha, Henrique L. Gomes, Dago M. de Leeuw, and Stefan C. J. Meskers, "Charge trapping at the polymer-metal oxide interface as a first step in the electroforming of organic-inorganic memory diodes," Proc. SPIE 9569, Printed Memory and Circuits, 956904 (Presented at SPIE Organic Photonics + Electronics: August 13, 2015; Published: 17 September 2015); https://doi.org/10.1117/12.2186577.
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