We present two novel capacitive modulator phase shifter architectures using a vertical oxide. The first structure consists of a vertical oxide slot embedded in a silicon waveguide along the propagation direction. The second structure is based on a sub-wavelength approach, with several periodic vertical oxide layers along the propagation direction. This paper focuses on the design of the modulator devices and the simulation of their performances.
A. Abraham, D. Perez-Galacho, S. Olivier, D. Marris-Morini, and L. Vivien, "Highly efficient silicon capacitive modulators based on a vertical oxide layer," Proc. SPIE 9891, Silicon Photonics and Photonic Integrated Circuits V, 989111 (Presented at SPIE Photonics Europe: April 05, 2016; Published: 13 May 2016); https://doi.org/10.1117/12.2227433.
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