Controlled absorption/emission is important for many optical devices such as photovoltaic and thermal photovoltaic. In this paper we show experimental and theoretical results of deeply subwavelength epsilon-near-zero materials using degenerately doped semiconductors, such as indium tin oxide, can be used to spectrally tailor perfect absorption/emission in the near-ir region. At mid-infrared frequencies, a superlattice of doped and undoped quantum wells can be used to create epsilon-near-zero medium for directional and spectrally tailored emission.
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