Single-walled carbon nanotubes (SWCNT) are a promising material for future optoelectronic applications, including flexible electrodes and field-effect transistors. Molecular doping of carbon nanotube surface can be an effective way to control the electronic structure and charge dynamics of these material systems. Herein, two organic semiconductors with different energy level alignment in respect to SWCNT are used to dope the channel of the SWCNT-based transistor. The effects of doping on the device performance are studied with a set of optoelectronic measurements. For the studied system, we observed an opposite change in photo-resistance, depending on the type (electron donor vs electron acceptor) of the dopants. We attribute this effect to interplay between two effects: (i) the change in the carrier concentration and (ii) the formation of trapping states at the SWCNT surface. We also observed a modest ~4 pA photocurrent generation in the doped systems, which indicates that the studied system could be used as a platform for multi-pulse optoelectronic experiments with photocurrent detection.
Jiangbin Zhang, Aleksei V. Emelianov, Artem A. Bakulin, and Ivan I. Bobrinetskiy, "Molecular doping of single-walled carbon nanotube transistors: optoelectronic study," Proc. SPIE 9923, Physical Chemistry of Interfaces and Nanomaterials XV, 992319 (Presented at SPIE Nanoscience + Engineering: August 31, 2016; Published: 26 September 2016); https://doi.org/10.1117/12.2236987.
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