We investigated forming of high refractive index (n), low extinction coefficient (k) of Si dielectrics in visible wavelength ranges. To decrease k, pulsed green laser annealing (GLA) with line beam of a 532-nm wavelength was applied in this study for homogeneous melting. By AFM, XRD and TEM analysis, we examined the defect reduction in various conditions during poly-crystallization. We achieved dielectric nanostructures having optical properties of n>4.2, k<0.06 at 550 nm wavelength and fine pitches down to 40 nm (aspect ratio 3:1) and 130 nm (aspect ratio 7:1) with ±5% size accuracy. Finally, we realized optical metasurfaces for optical band filters, flat lens and beam deflectors.
JeongYub Lee, Byonggwon Song, Jaekwan Kim, Chang-Won Lee, Seunghoon Han, Chan-Wook Baik, Heejeong Jeong, Yongsung Kim, and Chang Seung Lee, "Nanofabrication of low extinction coefficient and high-aspect-ratio Si structures for metaphotonic applications," Proc. SPIE 9927, Nanoengineering: Fabrication, Properties, Optics, and Devices XIII, 992708 (Presented at SPIE Nanoscience + Engineering: August 30, 2016; Published: 15 September 2016); https://doi.org/10.1117/12.2235523.
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