In this work we apply a new laser scanning apparatus in multiple ways to measure various aspects of in-process and final silicon-on-insulator (SOI) wafers in high volume manufacturing (HVM). The laser scanner enables high-spatialresolution whole-wafer metrology of topographic features, film thickness variation, and two scattering channels, while bridging between 200 mm and 300 mm diameters on a single platform.
John F. Valley, Steven W. Meeks, Yushan Chang, and Vamsi Velidandla, "Scanned laser inspection of SOI wafers for HVM," Proc. SPIE 9927, Nanoengineering: Fabrication, Properties, Optics, and Devices XIII, 99270I (Presented at SPIE Nanoscience + Engineering: August 30, 2016; Published: 26 September 2016); https://doi.org/10.1117/12.2238461.
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