High-fidelity two-qubit entanglement operations pose new challenges for spin qubits. Although spin orbit-coupling (SOC) can simplify entanglement via electric fields and microwave photons, it exposes conventional spin qubits to electrical noise. Here we devise a gate-tunable single-acceptor spin-orbit qubit in silicon having a sweet spot where the electric dipole spin resonance (EDSR) is maximized, and the qubit is simultaneously insensitive to dephasing from low-frequency electrical noise. The sweet spot protects the qubit during rapid single-qubit EDSR and two-qubit dipole-dipole mediated operations, and is only obtained by treating SOC non-perturbatively. More than 10000 one-qubit and 1000 two-qubit operations are possible in the predicted relaxation time, as necessary for surface codes. Moreover, circuit quantum electrodynamics with single dopants is feasible in this scheme, including dispersive single-spin readout, cavity-mediated two-qubit entangement, and strong Jaynes-Cummings coupling. Our approach provides a scalable route for controlling electrical and photon-mediated interactions between spins of individual dopants in silicon.
Dimitrie Culcer, Joseph Salfi, and Sven Rogge, "A single-atom spin-orbit qubit in Si
(Conference Presentation)," Proc. SPIE 9931, Spintronics IX, 99311K (Presented at SPIE Nanoscience + Engineering: August 30, 2016; Published: 4 November 2016); https://doi.org/10.1117/12.2231059.5166910726001.
Conference Presentations are recordings of oral presentations given at SPIE conferences and published as part of the proceedings. They include the speaker's narration with video of the slides and animations. Most include full-text papers. Interactive, searchable transcripts and closed captioning are now available for 2018 presentations, with transcripts for prior recordings added daily.
Search our growing collection of more than 16,000 conference presentations, including many plenaries and keynotes.