One crucial breakthrough in spin electronics has recently been achieved regarding the possibility to move magnetic domain walls (DWs) in magnetic tracks using the sole action of an electrical current instead of a conventional magnetic field. Here, we will present our recent results of DW dynamics obtained in Ta-CoFeB-MgO nanodevices with perpendicular magnetic anisotropy (PMA), which are widely used in STT-RAM applications, and discuss the critical problems to be addressed for implementation into a memory device. Using NV center microscopy to map DW pinning along a magnetic wire, we will first show1 that Ta/CoFeB(1nm)/MgO structures exhibit a very low density of pinning defects with respect to others materials with PMA. Then, we will focus on the possibility to use Electric Field Effect to control domain wall motion with low power dissipation. We will demonstrate gate voltage modulation of DW dynamics using different approaches based on dielectrics, piezoelectrics and ionic liquid layers.
Dafine Ravelosona, "Domain wall dynamics under electric field in CoFeB-MgO structures with perpendicular magnetic anisotropy
(Conference Presentation)," Proc. SPIE 9931, Spintronics IX, 993129 (Presented at SPIE Nanoscience + Engineering: August 30, 2016; Published: 4 November 2016); https://doi.org/10.1117/12.2240568.5167075295001.
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