Coulomb blockade is observed in suspended graphitic quantum dots designed based on the FET setup with active region being suspended - free from substrate interactions. The fabricated device with relatively thin graphitic layer as an active region exhibits Coulomb blockade features along with the high-T charging effect depending on the driving voltage. The observed features are further discussed in the correlation between the phonon DOS and the anomalies outside of the Coulomb blockade.
Sungbae J. Lee, "Coulomb blockade in suspended graphitic quantum dots
(Conference Presentation)," Proc. SPIE 9932, Carbon Nanotubes, Graphene, and Emerging 2D Materials for Electronic and Photonic Devices IX, 993205 (Presented at SPIE Nanoscience + Engineering: August 28, 2016; Published: 3 November 2016); https://doi.org/10.1117/12.2237724.5167075307001.
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