Recently, extraordinary physical properties of two-dimensional transition metal dichalcogenides (TMDs) have attracted great attention for various device applications, including photodetectors, field effect transistors, and chemical sensors. There have been intensive research efforts to grow high-quality and large area TMD thin films, and chemical vapor deposition (CVD) techniques enable scalable growth of layered MoS2 films. We investigated the roles of Au nanoparticles (NPs) on the transport and photoresponse of the CVD-grown MoS2 thin films. The Au NPs increased conductivity and enabled fast photoresponse of MoS2 thin films. These results showed that decoration of metal NPs were useful means to tailor the physical properties of CVD-grown MoS2 thin films. To clarify the roles of the metal particles, we compared the transport characteristics of MoS2 thin films with and without the Au NPs in different gas ambient conditions (N2, O2, and H2/N2). The ambient-dependence of the MoS2 thin films allowed us to discuss possible scenarios to explain our results based on considerations of band bending near the Au NPs, gas adsorption/desorption and subsequent charge transfer, and charge scattering/trapping by defect states.
Yunae Cho, Ahrum Sohn, Sujung Kim, Dong-Wook Kim, Byungjin Cho, Myung Gwan Hahm, and Dong-Ho Kim, "Influences of gas adsorption and Au nanoparticles on the electrical properties of CVD-grown MoS2 thin films
(Conference Presentation)," Proc. SPIE 9932, Carbon Nanotubes, Graphene, and Emerging 2D Materials for Electronic and Photonic Devices IX, 99320J (Presented at SPIE Nanoscience + Engineering: August 29, 2016; Published: 3 November 2016); https://doi.org/10.1117/12.2237404.5167075298001.
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