From Event: SPIE Organic Photonics + Electronics, 2016
Оrganic field-effect transistors (OFET) can combine photodetection and light amplification and, for example, work as phototransistors. Such organic phototransistors can be used in light-controlled switches and amplifiers, detection circuits, and sensors of ultrasensitive images. In this work, we present photophysical characterization of well-defined ultrathin organic field-effect devices with a semiconductive channel based on Langmuir-Blodgett monolayer film. We observe clear generation of photocurrent under illumination with a modulated laser at 405 nm. The increase of photocurrent with the optical modulation frequency indicates the presence of defect states serving as traps for photogenerated carriers and/or the saturation of charge concentration in the thin active layer. We also propose a simple one-dimensional numerical model of a photosensitive OFET. The model is based on the Poisson, current continuity and drift-diffusion equations allows future evaluation of the photocurrent generation mechanism in the studied systems.
Vasily A. Trukhanov, Daniil S. Anisimov, Vladimir V. Bruevich, Elena V. Agina, Oleg V. Borshchev, Sergei Ponomarenko, Jiangbin Zhang, Artem A. Bakulin, and Dmitri Yu. Paraschuk, "Monolayer organic field effect phototransistors: photophysical characterization and modeling," Proc. SPIE 9942, Organic Photovoltaics XVII, 994210 (Presented at SPIE Organic Photonics + Electronics: September 01, 2016; Published: 26 September 2016); https://doi.org/10.1117/12.2236482.
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