From Event: SPIE Organic Photonics + Electronics, 2016
N-type semiconductor is a necessary component for high speed and low power dissipation complementary circuits. However, n-type organic field-effect transistors (OFETs) with both high electron mobility and good ambient stability are rare. In this contribution, we develop a strong electron-deficient small molecule, tetrafluorine benzodifurandione-based oligo(p-phenylenevinylene) (4F-BDOPV), for n-type OFETs. 4F-BDOPV has a low LUMO level down to −4.44 eV and a cofacial packing structure in single crystal. These fea-tures provide 4F-BDOPV with good ambient stability and large charge transfer integrals leading to a high electron mobility of up to 12.6 cm2 V−1 s−1 in air, which is among the highest values for n-type OFETs. This work demonstrates a new molecule system for high-performance air-stable n-type OFETs, which is highly promising for single crystal based electronics.
Jian Pei, Jie-Yu Wang, Ke Shi, and Yu-Qing Zheng, "What is the real effect of halogen atoms? electronic and packing properties of organic semiconductors
(Conference Presentation)," Proc. SPIE 9943, Organic Field-Effect Transistors XV, 99430V (Presented at SPIE Organic Photonics + Electronics: August 31, 2016; Published: 2 November 2016); https://doi.org/10.1117/12.2238787.5168997891001.
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