From Event: SPIE Organic Photonics + Electronics, 2016
Organic thin film transistors (OTFTs) based on single crystalline thin films of organic semiconductors have seen considerable development in the recent years. The most successful method for the fabrication of single crystalline films are solution-based meniscus guided coating techniques such as dip-coating, solution shearing or zone casting. These upscalable methods enable rapid and efficient film formation without additional processing steps. The single-crystalline film quality is strongly dependent on solvent choice, substrate temperature and coating speed. So far, however, process optimization has been conducted by trial and error methods, involving, for example, the variation of coating speeds over several orders of magnitude. Through a systematic study of solvent phase change dynamics in the meniscus region, we develop a theoretical framework that links the optimal coating speed to the solvent choice and the substrate temperature. In this way, we can accurately predict an optimal processing window, enabling fast process optimization. Our approach is verified through systematic OTFT fabrication based on films grown with different semiconductors, solvents and substrate temperatures. The use of best predicted coating speeds delivers state of the art devices. In the case of C8BTBT, OTFTs show well-behaved characteristics with mobilities up to 7 cm2/Vs and onset voltages close to 0 V. Our approach also explains well optimal recipes published in the literature. This route considerably accelerates parameter screening for all meniscus guided coating techniques and unveils the physics of single crystalline film formation.
Robby Janneck, Federico Vercesi, Paul Heremans, Jan Genoe, and Cedric Rolin, "Predicting the optimal process window for the coating of single-crystalline organic films with mobilities exceeding 7 cm2/Vs.," Proc. SPIE 9943, Organic Field-Effect Transistors XV, 99430X (Presented at SPIE Organic Photonics + Electronics: August 31, 2016; Published: 23 September 2016); https://doi.org/10.1117/12.2235342.
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