From Event: SPIE Organic Photonics + Electronics, 2016
Typical CMOS colour image sensors consist of Si-based photodetectors (PDs) attached with colour filter arrays (i.e., the Bayer pattern). Recent trends on the development of high resolution image sensors, however, require downsizing the pixel dimension, which inevitably results in the loss of sensitivity due to the reduction in the photon acquisition. Very recently, hybrid stacks of organic photodetectors (OPDs) on conventional CMOS technologies have been proposed as one of the promising approaches to realise highly sensitive image sensors by doubling the light detecting area in the limited pixel size. Specifically, OPDs with orthogonal photosensitivity to green light and Si-based PDs with red and blue colour filters serve as the top and bottom photo-conversion layers, respectively. In this presentation, we will introduce the recent development of high performance green light sensitive OPDs and the demonstration of colour images from hybrid CMOS image sensors proposed.
OPDs consisting of small molecule organic bulk heterto-junction structures, hole/electron buffer layers, and transparent top/bottom ITO electrodes exhibited peak external quantum efficiencies of 60-65% at 550-560 nm wavelengths and full width at half maximum of ~120 nm at reverse bias of 3 V. Extremely low dark current densities in the range of 0.2-0.5 nA/cm2 at reverse bias of 3V and consequently high specific detectivities over 2×10^13 Jones were obtained from the developed OPD system. Further investigations in terms of the molecular structures of organic light absorbing materials, buffer materials, layer sequences, and even integration issues of the OPD on the CMOS will be described in detail.
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