From Event: SPIE Organic Photonics + Electronics, 2016
High Performance organic field-effect transistor (OFET) memory devices were successfully prepared using new dielectric materials, poly(N-(hydroxymethyl)acrylamide-co-5 -(9-(5-(diethylamino)pentyl)-2-(4-vinylphenyl)-9H-fluorene (P(NMA-co-F6NSt)), which contained chemical cross-linkable segment (NMA) and hole trapping building block (F6NSt). The high k characteristics of P(NMA-co-F6NSt)) led to a low voltage operation, a small power consumption, and a good digital information storage capacity. Such P(NMA-co-F6NSt) dielectrics in OFET memories with variant NMA/F6NSt molar ratios (100/0 (P1), 95/5 (P2), 80/20 (P3), and 67/33 (P4)) showed excellent insulating properties and good charge storage performance under a low operating voltage below ±5V, due to the tightly network structures after crosslinking and well-dispersed trapping cites (i.e. fluorene moieties). P3-based memory device, in particular, exhibited largest memory window of 4.13 V among the studied polymers, and possessed stable data retention stability over 104 s with a high on/off current ratio (i.e. 104) and good endurance characteristics of more than 200 write-read-write-erase (WRER) cycles. The above results suggested that a high-performance OFET memory device could be facilely achieved using the novel synthesized high-k copolymers.
Hung-Chin Wu, Chih-Chien Hung, Yu-Cheng Chiu, Shih-Huang Tung, and Wen-Chang Chen, "Crosslinkable high k polymer dielectrics for low voltage organic field-effect transistor memories
(Conference Presentation)," Proc. SPIE 9945, Printed Memory and Circuits II, 994509 (Presented at SPIE Organic Photonics + Electronics: September 01, 2016; Published: 7 November 2016); https://doi.org/10.1117/12.2236458.5169177905001.
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