From Event: SPIE Optical Engineering + Applications, 2016
Light emitting diodes (LEDs) for visible light communication (VLC) as radio sources is a solution to channel crowding
of radio frequency (RF) signal. However, for the application on high-speed communication, getting higher bandwidth of
LEDs is always the problem which is limited by the spontaneous carrier lifetime in the multiple quantum wells. In this
paper, we proposed GaN-based LEDs accompanied with photonic crystal (PhC) nanostructure for high speed
communication. Using the characteristic of photonic band selection in photonic crystal structure, the guided modes are
modulated by RF signal. The PhC can also provide faster mode extraction. From time resolved photoluminescence (TRPL)
at room temperature, carrier lifetime of both lower- and higher-order modes is shortened. By observing f-3dB -J curve, it
reveals that the bandwidth of PhC LEDs is higher than that of typical LED. The optical - 3-dB bandwidth (f-3dB) can be
achieved up to 240 MHz in the PhC LED (PhCLED). We conclude that the higher operation speed can be obtained due to
faster radiative carrier recombination of extracted guided modes from the PhC nanostructure.
Tung-Ching Lin, Yu-Feng Yin, Wen-Yi Lan, and JianJang Huang, "High optical bandwidth GaN based photonic-crystal light-emitting diodes," Proc. SPIE 9954, Fifteenth International Conference on Solid State Lighting and LED-based Illumination Systems, 99540A (Presented at SPIE Optical Engineering + Applications: August 31, 2016; Published: 7 September 2016); https://doi.org/10.1117/12.2236473.
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