From Event: SPIE Optical Engineering + Applications, 2016
We report the use of sol-gel method at room ambient to grow nanoscale thin film of Ga2O3 on Si surface for both surface
passivation and gate dielectric. The admittance measurements were carried out in the frequency range of 20 kHz-1 MHz
at room temperature. Voltage dependent profile of interfacial trap density (Dit) was obtained by using low and high
frequency capacitance method. The capacitance (C)-voltage (V) analyses show that the structures have a low interfacial
trap density (Dit) of 1x1012 cm-2eV-1. The Ga2O3 thin film synthesized via sol-gel method directly on devices to function
as a gate dielectric film is found to be very effective. We also present our experimental results for a number of gate
dielectric and device passivation applications.
Ahmet Kaya, Jianyi Gao, Hilal Cansızoglu, Ahmed S. Mayet, Hasina H. Mamtaz, Soroush GhandiParsi, Srabanti Chowdhury, and M. Saif Islam, "Ga2O3 as Both Gate Dielectric and Surface Passivation via Sol-Gel Method at Room Ambient," Proc. SPIE 9957, Wide Bandgap Power Devices and Applications, 995709 (Presented at SPIE Optical Engineering + Applications: August 29, 2016; Published: 19 September 2016); https://doi.org/10.1117/12.2239177.
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