From Event: SPIE Optical Engineering + Applications, 2016
We report the development of an edge termination by depositing thin Si3N4 passivating film on 4H-SiC epilayer based
radiation detector. The edge termination method is shown to be very effective for improving both the detector leakage
current and radiation detection performance compared with that of a conventional detector fabricated from the same
parent wafer. The detector leakage current was found to have improved two orders of magnitude. Significant
improvement in radiation detection performance was shown from alpha spectroscopy measurements prior and
subsequent to Si3N4 edge termination. Deep Level Transient Spectroscopy (DLTS) measurements revealed a reduction
in life-time killing defects of detectors with Si3N4 edge termination which could be related to the observed
improvements in radiation detection performance.
Cihan Oner, Towhid A. Chowdhury, Rahmi O. Pak, and Krishna C. Mandal, "Improved radiation detectors on 4H-SiC epilayers by edge termination," Proc. SPIE 9968, Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XVIII, 99680M (Presented at SPIE Optical Engineering + Applications: August 30, 2016; Published: 30 September 2016); https://doi.org/10.1117/12.2238874.
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