From Event: SPIE Optical Engineering + Applications, 2016
CMOS pixel electronics open up for applications with single photon or particle processing. TIMEPIX3 is a readout chip
in the MEDIPIX family with the ability to simultaneously determine energy and time of interaction in the pixel. The
device is fully event driven, sending out data on each interaction at a maximum speed of about 40 Mhits/s. The concept
allows for off-line processing to correct for charge sharing or to find the interaction point in multi pixel events. The
timing resolution of 1.56 ns allows for three dimensional tracking of charged particles in a thick sensor due to the drift
time for the charge in the sensor. The experiments in this presentation have been performed with silicon sensors bonded
MEDIPIX family chips with special focus on TIMEPIX3. This presentation covers basic performance of the chip,
spectral imaging with hard X-rays, detection and imaging with charged particles and neutrons. Cluster identification,
centroiding and charge summing is extensively used to determine energy and position of the interaction. For neutron
applications a converter layer was placed on top of the sensor.
Christer Fröjdh, David Krapohl, and Göran Thungström, "Hard x-ray imaging and particle detection with TIMEPIX3," Proc. SPIE 9968, Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XVIII, 99680T (Presented at SPIE Optical Engineering + Applications: August 30, 2016; Published: 30 September 2016); https://doi.org/10.1117/12.2238505.
Conference Presentations are recordings of oral presentations given at SPIE conferences and published as part of the conference proceedings. They include the speaker's narration along with a video recording of the presentation slides and animations. Many conference presentations also include full-text papers. Search and browse our growing collection of more than 14,000 conference presentations, including many plenary and keynote presentations.
Study of self-shadowing effect as a simple means to realize nanostructured thin films and layers with special attentions to birefringent obliquely deposited thin films and photo-luminescent porous silicon