From Event: SPIE Optical Engineering + Applications, 2016
A growing demand on incident detection is recognized since the Great East Japan Earthquake and successive accidents in Fukushima nuclear power plant in 2011. Radiation tolerant image sensors are powerful tools to collect crucial information at initial stages of such incidents. However, semiconductor based image sensors such as CMOS and CCD have limited tolerance to radiation exposure. Image sensors used in nuclear facilities are conventional vacuum tubes using thermal cathodes, which have large size and high power consumption.
In this study, we propose a compact image sensor composed of a CdTe-based photodiode and a matrix-driven Spindt-type electron beam source called field emitter array (FEA). A basic principle of FEA-based image sensors is similar to conventional Vidicon type camera tubes, but its electron source is replaced from a thermal cathode to FEA. The use of a field emitter as an electron source should enable significant size reduction while maintaining high radiation tolerance. Current researches on radiation tolerant FEAs and development of CdTe based photoconductive films will be presented.
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