Laser diodes fabricated from the AlGaInN material system is an emerging technology for
defence, security and sensing applications. The AlGaInN material system allows for laser diodes
to be fabricated over a very wide range of wavelengths from u.v., ~380nm, to the visible
~530nm, by tuning the indium content of the laser GaInN quantum well, giving rise to new and
novel applications including displays and imaging systems, free-space and underwater
telecommunications and the latest quantum technologies such as optical atomic clocks and atom
S. P. Najda, P. Perlin, T. Suski, L. Marona, M. Boćkowski, M. Leszczyński, P. Wisnieski, R. Czernecki, and G. Targowski, "Advances in AlGaInN laser diode technology for defence, security and sensing applications," Proc. SPIE 9992, Emerging Imaging and Sensing Technologies, 99920C (Presented at SPIE Security + Defence: September 28, 2016; Published: 25 October 2016); https://doi.org/10.1117/12.2240555.
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Study of self-shadowing effect as a simple means to realize nanostructured thin films and layers with special attentions to birefringent obliquely deposited thin films and photo-luminescent porous silicon