The results of calculation of nitrogen vacancy geometry in GaN/AlN heterointerface and its comparison with experimental data are discussed in the paper. The methods of calculation of point defects geometry in the GaN/AlN interface within the frameworks of self-consistent field and density functional theory are compared.
Yahor V. Lebiadok, Tatyana V. Bezyazychnaya, and Konstantin S. Zhuravlev, "Nitrogen vacancies in the GaN/AlN heterointerface," Proc. SPIE 9994, Optical Materials and Biomaterials in Security and Defence Systems Technology XIII, 99940I (Presented at SPIE Security + Defence: September 29, 2016; Published: 24 October 2016); https://doi.org/10.1117/12.2241944.
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