Mid-wave infrared (MWIR) detection has been a topic of interest because of its applications in imaging, security, military, and medical diagnostics. The challenge for the MWIR imaging system has been reducing the system size, weight, power consumption, and cost (SWaP-C) while maintaining range and resolution. To help improve SWaP-C, a novel Cadmium Selenide (CdSe) on Lead Selenide (PbSe) type-II heterojunction photovoltaic detector has been demonstrated by epitaxial growth of n-type CdSe on p-type PbSe single crystal film. The I-V measurements show a p-n junction diode with a rectifying factor over 50 at room temperature. The detector structure is characterized by radiometric measurement at room temperature. 30μm × 30μm pixel achieved a D* of 6.5×10^8 Jones under zero bias photovoltaic operation. With decreasing temperature to 230K (thermoelectric cooling), we achieved a D* of 4.4×10^9 Jones.

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Lance L. McDowell, Milad Rastkar Mirzaei, and Zhisheng Shi, "CdSe/PbSe high-temperature mid-infrared heterostructure photovoltaic photodetector," Proc. SPIE PC12420, Terahertz, RF, Millimeter, and Submillimeter-Wave Technology and Applications XVI, PC124200K (Presented at SPIE OPTO: February 01, 2023; Published: 13 March 2023); https://doi.org/10.1117/12.2658801.6321511487112.