Hybrid integrated diode lasers offer a robust and small-sized solution for applications in telecommunications, quantum optics and metrology due to their wide tunability and ultra-narrow linewidth. Here, we present the fabrication, packaging and successful operation of the first fully integrated, aluminum oxide (Al2O3) based, hybrid diode laser operating at 405 nm. Low-loss, high-confinement waveguides are fabricated with a measured propagation loss of only 2.8 ± 0.3 dB/cm. The hybrid laser consists of a GaN SLED butt-coupled to an Al2O3 feedback circuit comprising of two microring resonators that form a frequency selective Vernier filter. The chip assembly is packaged in a hermetically sealed, butterfly housing for optimal performance and durability. The laser shows a maximum output power of 0.74 mW and is tunable over the entire gain bandwidth of 4.4 nm.

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Cornelis Franken, Ward Hendriks, Meindert Dijkstra, Adriano do Nascimento Jr., Lisa Winkler, Albert van Rees, Soheila Mardani, Ronald Dekker, Joost van Kerkhof, Peter van der Slot, Sonia García-Blanco, and Klaus Boller, "First near-UV hybrid integrated laser in the Al2O3 platform," Proc. SPIE PC12424, Integrated Optics: Devices, Materials, and Technologies XXVII, PC124240A (Presented at SPIE OPTO: January 31, 2023; Published: 7 April 2023); https://doi.org/10.1117/12.2657253.6323250858112.