From Event: SPIE OPTO, 2023
Long wavelength quantum dot in plane lasers have been scaled to both high volume and the larger 200mm GaAs substrates. Scaling to 300mm on a silicon platform has also been achieved. All wafers are grown on production-ready MBE platforms. Other material systems such as InGaAs and dilute nitride have been similarly scaled often by going back to first principle of process design in conjunction with substrate engineering. The main drivers for this transition to high volume are the need to integrate compound semiconductors with silicon foundries for not only data communications but other applications like automotive sensing and health care.
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Andrew Clark, Andrew Johnson, Matthew Geen, Mark Furlong, and Rodney Pelzel, "Engineering scalable in-plane semiconductor lasers for high volume manufacturing," Proc. SPIE PC12440, Novel In-Plane Semiconductor Lasers XXII, PC1244008 (Presented at SPIE OPTO: January 31, 2023; Published: 17 March 2023); https://doi.org/10.1117/12.2668434.6321437452112.