PROCEEDINGS VOLUME 0276
1981 MICROLITHOGRAPHY CONFERENCES | 30 MARCH - 2 APRIL 1981
Optical Characterization Techniques for Semiconductor Technology
IN THIS VOLUME

0 Sessions, 33 Papers, 0 Presentations
All Papers  (33)
1981 MICROLITHOGRAPHY CONFERENCES
30 March - 2 April 1981
San Jose, United States
All Papers
Proc. SPIE 0276, Characterization Of Semiconductors By Photoluminescence And Photoluminescence Excitation Spectroscopy, 0000 (30 April 1981); doi: 10.1117/12.931681
Proc. SPIE 0276, Semiconductor Materials Characterization By High-Resolution Optical Spectroscopy, 0000 (30 April 1981); doi: 10.1117/12.931682
Proc. SPIE 0276, Photoluminescence Characterization Of Thermally-Induced Defects In Czochralski-Grown Si Wafers, 0000 (30 April 1981); doi: 10.1117/12.931683
Proc. SPIE 0276, Cathodoluminescence Studies Of Semiconductor-Oxide Interfaces, 0000 (30 April 1981); doi: 10.1117/12.931684
Proc. SPIE 0276, Electro-Optical Characterization Of Semiconductors, 0000 (30 April 1981); doi: 10.1117/12.931685
Proc. SPIE 0276, Lifetime Scanning Measurements On Hg0.7Cd0.3Te By Population Modulation, 0000 (30 April 1981); doi: 10.1117/12.931686
Proc. SPIE 0276, Characterization Of Low-Doped Metal Oxide Semiconductor (MOS) Structures Using Pulsed Photoinjection, 0000 (30 April 1981); doi: 10.1117/12.931687
Proc. SPIE 0276, Applications Of A Two-Wavelength Laser Scanner For Material/Device Characterization, 0000 (30 April 1981); doi: 10.1117/12.931688
Proc. SPIE 0276, Raman Scattering Detection Of Elemental Group V Deposits In Native Oxides On III-V Compound Semiconductors, 0000 (30 April 1981); doi: 10.1117/12.931689
Proc. SPIE 0276, Material Characterization By Raman Scattering, 0000 (30 April 1981); doi: 10.1117/12.931690
Proc. SPIE 0276, Characterization Of Thermal Annealing Of Implanted GaAs Using Raman Scattering, 0000 (30 April 1981); doi: 10.1117/12.931691
Proc. SPIE 0276, Surface Plasmon Spectroscopy For The Optical Characterization Of Thin Metal Films And Their Surfaces, 0000 (30 April 1981); doi: 10.1117/12.931692
Proc. SPIE 0276, Infrared Transmission Characterization Of P-Type Gallium Arsenide, 0000 (30 April 1981); doi: 10.1117/12.931693
Proc. SPIE 0276, Optical Properties Of Proton Implanted N-Type GaAs, 0000 (30 April 1981); doi: 10.1117/12.931694
Proc. SPIE 0276, Infrared Localized Vibrational Mode Spectroscopy Of Carbon-Implanted GaAs, 0000 (30 April 1981); doi: 10.1117/12.931695
Proc. SPIE 0276, Direct Determination Of The Far-Infrared Optical Constants Of A Solid, 0000 (30 April 1981); doi: 10.1117/12.931696
Proc. SPIE 0276, Future Needs For Semiconductor Characterization, 0000 (30 April 1981); doi: 10.1117/12.931697
Proc. SPIE 0276, Laser-Induced Crystal Growth Measurements By Time-Resolved Optical Reflectivity, 0000 (30 April 1981); doi: 10.1117/12.931698
Proc. SPIE 0276, Light Scattering Surface Roughness Characterization, 0000 (30 April 1981); doi: 10.1117/12.931699
Proc. SPIE 0276, Modulation Spectroscopy As A Technique For Semiconductor Characterization, 0000 (30 April 1981); doi: 10.1117/12.931700
Proc. SPIE 0276, Internal Electroabsorption In Heterostructures: A Nondestructive Optical Method For Probing Epitaxial Layers, 0000 (30 April 1981); doi: 10.1117/12.931701
Proc. SPIE 0276, End-Point Detection With Laser Interferometry, 0000 (30 April 1981); doi: 10.1117/12.931702
Proc. SPIE 0276, Optical Methods For End-Point Detection In Plasma Etching, 0000 (30 April 1981); doi: 10.1117/12.931703
Proc. SPIE 0276, Ellipsometric Configurations And Techniques, 0000 (30 April 1981); doi: 10.1117/12.931704
Proc. SPIE 0276, Microstructural Information From Optical Properties In Semiconductor Technology, 0000 (30 April 1981); doi: 10.1117/12.931705
Proc. SPIE 0276, Process Control In Semiconductor Technology Using Ellipsometry, 0000 (30 April 1981); doi: 10.1117/12.931706
Proc. SPIE 0276, Optical Properties Of Lamelliform Materials, 0000 (30 April 1981); doi: 10.1117/12.931707
Proc. SPIE 0276, Reflection Spectroscopy Analysis Of Surfaces And Thin Films, 0000 (30 April 1981); doi: 10.1117/12.931709
Proc. SPIE 0276, Infrared Reflectance Spectra Of Thin-Epitaxial Silicon Layers, 0000 (30 April 1981); doi: 10.1117/12.931710
Proc. SPIE 0276, Optical Detection And Minimization Of Surface Overlayers On Semiconductors Using Spectroscopic Ellipsometry, 0000 (30 April 1981); doi: 10.1117/12.931711
Proc. SPIE 0276, A New High Precision Differential Spectrometer: Construction, Characteristics, And Capabilities, 0000 (30 April 1981); doi: 10.1117/12.931712
Proc. SPIE 0276, Characteristics Of Polarized Light Reflection From The Si02-Si Film-Substrate System, 0000 (30 April 1981); doi: 10.1117/12.931713
Proc. SPIE 0276, Small Area Measurement Of Multiple Film Thicknesses, Dopant Concentrations And Impurity Levels Using A New Infrared Microspectrophotometer, 0000 (30 April 1981); doi: 10.1117/12.931714
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