PROCEEDINGS VOLUME 0285
1981 TECHNICAL SYMPOSIUM EAST | 21-22 APRIL 1981
Infrared Detector Materials
IN THIS VOLUME

0 Sessions, 15 Papers, 0 Presentations
All Papers  (15)
1981 TECHNICAL SYMPOSIUM EAST
21-22 April 1981
Washington, D.C., United States
All Papers
Proc. SPIE 0285, Evolving Perspectives And Unifying Characteristics Of The IV-VI Semiconductors, 0000 (11 June 1981); doi: 10.1117/12.965786
Proc. SPIE 0285, Epitaxial Thin Film IV-VI Detectors: Device Performance And Basic Material Properties, 0000 (11 June 1981); doi: 10.1117/12.965787
Proc. SPIE 0285, Preparation Of Epitaxial Thin Film Lead Salt Infrared Detectors, 0000 (11 June 1981); doi: 10.1117/12.965788
Proc. SPIE 0285, The Pb/PbS0.5Se0.5 Interface And Performance Of Pb/PbS0.5Se0.5 Photodiodes, 0000 (11 June 1981); doi: 10.1117/12.965789
Proc. SPIE 0285, Physics Of Surface Space Charge Layers On PbTe, 0000 (11 June 1981); doi: 10.1117/12.965791
Proc. SPIE 0285, Magnetoresistance In IV-VI Semiconductors, 0000 (11 June 1981); doi: 10.1117/12.965792
Proc. SPIE 0285, Slider Liquid-Phase Epitaxy (LPE) Of Hg[sub]1-x[/sub]Cd[sub]x[/sub]Te, 0000 (11 June 1981); doi: 10.1117/12.965797
Proc. SPIE 0285, Effect Of Ultraviolet Irradiation On The Performance Of (Hg,Cd)Te Photoconductors, 0000 (11 June 1981); doi: 10.1117/12.965798
Proc. SPIE 0285, Properties Of rf Triode-Sputtered (Hg1-xCdx)Te Thin Films, 0000 (11 June 1981); doi: 10.1117/12.965799
Proc. SPIE 0285, Properties Of Passivant Films On HgCdTe - Interaction With The Substrate, 0000 (11 June 1981); doi: 10.1117/12.965801
Proc. SPIE 0285, Extrinsic Silicon Focal Plane Arrays - Influence Of Material Properties, 0000 (11 June 1981); doi: 10.1117/12.965802
Proc. SPIE 0285, Improved Uniformity In Float Zone Si:Ga, 0000 (11 June 1981); doi: 10.1117/12.965803
Proc. SPIE 0285, Silicon-Rich Si-Ge Alloys For Infrared Detectors - Material Properties, 0000 (11 June 1981); doi: 10.1117/12.965805
Proc. SPIE 0285, Development Of In-X Doped Silicon As An Infrared Detector Material, 0000 (11 June 1981); doi: 10.1117/12.965806
Proc. SPIE 0285, Solution Growth Of Thallium-Doped Silicon For 3-5 Micrometer Photoconductive Detectors, 0000 (11 June 1981); doi: 10.1117/12.965807
Back to Top