PROCEEDINGS VOLUME 0323
1982 LOS ANGELES TECHNICAL SYMPOSIUM | 27-29 JANUARY 1982
Semiconductor Growth Technology
IN THIS VOLUME

0 Sessions, 24 Papers, 0 Presentations
All Papers  (24)
1982 LOS ANGELES TECHNICAL SYMPOSIUM
27-29 January 1982
Los Angeles, United States
All Papers
Proc. SPIE 0323, Molecular Beam Epitaxial Growth Of Silicon Devices, 0000 (15 September 1982); doi: 10.1117/12.934269
Proc. SPIE 0323, Al[sub]x[/sub]Ga[sub]1-x[/sub]As/GaAs Quantum Well Heterojunction Lasers Grown By Molecular Beam Epitaxy, 0000 (15 September 1982); doi: 10.1117/12.934270
Proc. SPIE 0323, Cascade AlGaAs-GaAs Solar Cell Research Using Molecular Beam Epitaxy, 0000 (15 September 1982); doi: 10.1117/12.934271
Proc. SPIE 0323, Novel Ga/AsCl[sub]3[/sub]/H[sub]2[/sub] Reactor For Controlling Stoichiometry In The Growth Of Vapor Phase Epitaxy (VPE) GaAs, 0000 (15 September 1982); doi: 10.1117/12.934272
Proc. SPIE 0323, Growth And Characterization Of High Purity H[sub]2[/sub]-In-HCl-PH[sub]3[/sub] Vapor Phase Epitaxy (VPE) InP, 0000 (15 September 1982); doi: 10.1117/12.934273
Proc. SPIE 0323, Material Characterization And Device Performance Of Liquid Doping Si In GaAs By AsCl[sub]3[/sub] Technique, 0000 (15 September 1982); doi: 10.1117/12.934274
Proc. SPIE 0323, InP Millimeter Wave Gunn Devices By Vapor Phase Epitaxy (VPE), 0000 (15 September 1982); doi: 10.1117/12.934275
Proc. SPIE 0323, Growth And Characterization Of Vapor Deposited Indium Phosphide, 0000 (15 September 1982); doi: 10.1117/12.934276
Proc. SPIE 0323, Laser Spectroscopic Monitoring Of A Hydride Transport Vapor Phase Epitaxy (VPE) Reactor, 0000 (15 September 1982); doi: 10.1117/12.934277
Proc. SPIE 0323, Organometallic Vapor Phase Epitaxy (OMVPE) Growth Of Al[sub]x[/sub]Ga[sub]1-x[/sub]As, 0000 (15 September 1982); doi: 10.1117/12.934278
Proc. SPIE 0323, Growth And Characterization Of GaAs, GaInAs, and GaInAsP for microwave applications, 0000 (15 September 1982); doi: 10.1117/12.934279
Proc. SPIE 0323, Comparison Of InP Grown By The Chloride And Hydride Techniques, 0000 (15 September 1982); doi: 10.1117/12.934280
Proc. SPIE 0323, Reflecting On Metalorganic Chemical Vapor Deposition (MOCVD), 0000 (15 September 1982); doi: 10.1117/12.934281
Proc. SPIE 0323, Shallow Proton Striped GaAlAs Lasers Grown By Metalorganic Chemical Vapor Deposition (MOCVD), 0000 (15 September 1982); doi: 10.1117/12.934282
Proc. SPIE 0323, Comparative Study Of GaAs Grown By Organometallic Chemical Vapor Deposition (OMCVD) Using Trimethyl And Triethyl Gallium Sources, 0000 (15 September 1982); doi: 10.1117/12.934283
Proc. SPIE 0323, High Efficiency GaAs[sub](1-x)[/sub]P[sub](x)[/sub] Solar Cells Fabricated By Vacuum Metalorganic Chemical Vapor Deposition, 0000 (15 September 1982); doi: 10.1117/12.934284
Proc. SPIE 0323, Use Of Column V Alkyls In Organometallic Vapor Phase Epitaxy (OMVPE), 0000 (15 September 1982); doi: 10.1117/12.934285
Proc. SPIE 0323, Impurity Energy Levels For Se And Zn In Ga[sub](1 -x)[/sub]Al[sub]x[/sub]As, 0000 (15 September 1982); doi: 10.1117/12.934286
Proc. SPIE 0323, Growth Of InP By Metalorganic Chemical Vapor Deposition (MOCVD), 0000 (15 September 1982); doi: 10.1117/12.934287
Proc. SPIE 0323, Liquid Phase Epitaxy (LPE) Techniques For Compound Semiconductor Growth, 0000 (15 September 1982); doi: 10.1117/12.934288
Proc. SPIE 0323, Compound Semiconductor Surface And Interface Problems In Liquid Phase Epitaxy (LPE), 0000 (15 September 1982); doi: 10.1117/12.934289
Proc. SPIE 0323, Optical Device Structures Grown By Liquid Phase Epitaxy (LPE), 0000 (15 September 1982); doi: 10.1117/12.934290
Proc. SPIE 0323, Slider Induced Convection In Horizontal Liquid Phase Epitaxy (LPE) System, 0000 (15 September 1982); doi: 10.1117/12.934291
Proc. SPIE 0323, Determination Of Al In Ga[sub]1-x[/sub]Al[sub]x[/sub]As By Auger Spectroscopy Ion Microprobe Analysis And Photoluminescence, 0000 (15 September 1982); doi: 10.1117/12.934292
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