PROCEEDINGS VOLUME 0346
1982 TECHNICAL SYMPOSIUM EAST | 5-7 MAY 1982
Thin Film Technologies and Special Applications
IN THIS VOLUME

0 Sessions, 15 Papers, 0 Presentations
All Papers  (15)
1982 TECHNICAL SYMPOSIUM EAST
5-7 May 1982
Arlington, United States
All Papers
Proc. SPIE 0346, Theories Of Nucleation And Growth Of Thin Films, 0000 (15 September 1982); doi: 10.1117/12.933784
Proc. SPIE 0346, Columnar And Nodular Growth Of Thin Films, 0000 (15 September 1982); doi: 10.1117/12.933785
Proc. SPIE 0346, Thin Film Growth By Molecular Beam Epitaxy, 0000 (15 September 1982); doi: 10.1117/12.933786
Proc. SPIE 0346, Laser Chemical Vapor Deposition Using Cw And Pulsed Lasers, 0000 (15 September 1982); doi: 10.1117/12.933787
Proc. SPIE 0346, Glassy Optical Coatings By Multisource Evaporation, 0000 (15 September 1982); doi: 10.1117/12.933788
Proc. SPIE 0346, Phenomenological Description Of Thin Film Interdiffusion, 0000 (15 September 1982); doi: 10.1117/12.933789
Proc. SPIE 0346, Surface Microanalysis Characterization Of ThF4 Thin Films, 0000 (15 September 1982); doi: 10.1117/12.933790
Proc. SPIE 0346, Morphology And Correlation With Defects Of Small Scale Laser-Induced Damage, 0000 (15 September 1982); doi: 10.1117/12.933791
Proc. SPIE 0346, Photoemissive Materials, 0000 (15 September 1982); doi: 10.1117/12.933792
Proc. SPIE 0346, Thin Film Photodiodes, 0000 (15 September 1982); doi: 10.1117/12.933793
Proc. SPIE 0346, Effect Of Ion Implantation On The Reflectivity Of Silica, 0000 (15 September 1982); doi: 10.1117/12.933794
Proc. SPIE 0346, Optical Filtering And Spatial Frequency Coding With Interference Coatings, 0000 (15 September 1982); doi: 10.1117/12.933795
Proc. SPIE 0346, Creation Of Thin, Highly Doped Layers For Ohmic Contact Formation On N-Type GAAS And SI, 0000 (15 September 1982); doi: 10.1117/12.933796
Proc. SPIE 0346, Microstructure In A-Gaas:H Alloys And Its Correlation With The Electronic Properties, 0000 (15 September 1982); doi: 10.1117/12.933797
Proc. SPIE 0346, Vibrational Properties Of Rf Sputtered Hydrogenated Amorphous Ge-Si Alloys, 0000 (15 September 1982); doi: 10.1117/12.933798
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