PROCEEDINGS VOLUME 0463
1984 LOS ANGELES TECHNICAL SYMPOSIUM | 24-26 JANUARY 1984
Advanced Semiconductor Processing/Characterization of Electronic/Optical Materials
IN THIS VOLUME

0 Sessions, 22 Papers, 0 Presentations
All Papers  (22)
1984 LOS ANGELES TECHNICAL SYMPOSIUM
24-26 January 1984
Los Angeles, United States
All Papers
Proc. SPIE 0463, Silicon Material Phenomena In VLSI Circuit Processing, 0000 (31 May 1984); doi: 10.1117/12.941338
Proc. SPIE 0463, Megavolt Ion Implantation Into Silicon, 0000 (31 May 1984); doi: 10.1117/12.941340
Proc. SPIE 0463, Electrical Characteristics Of Amorphous Ni[sub]36[/sub]W[sub]64[/sub] Contacts On Silicon, 0000 (31 May 1984); doi: 10.1117/12.941342
Proc. SPIE 0463, Electronic And Chemical Structure Of Metal-Silicon Interfaces, 0000 (31 May 1984); doi: 10.1117/12.941343
Proc. SPIE 0463, The Growth Of Platinum Nickel Silicide By Thermal Anneal Of An Alloy Film On Silicon, 0000 (31 May 1984); doi: 10.1117/12.941344
Proc. SPIE 0463, Thin Film Reaction Investigation By Backscattering Spectroscopy - W Marker Study Of Pd[sub]2[/sub]Ge Formation, 0000 (31 May 1984); doi: 10.1117/12.941345
Proc. SPIE 0463, Infrared Properties Of Heavily Implanted Silicon, Germanium And Gallium Arsenide, 0000 (31 May 1984); doi: 10.1117/12.941346
Proc. SPIE 0463, An Indirect Plasma-Enhanced Chemical Vapor Deposition Technique For Gate Dielectrics, 0000 (31 May 1984); doi: 10.1117/12.941347
Proc. SPIE 0463, Characterization Of Single Crystal Cu[sub]2[/sub]S/CdS Heterojunctions By High Resolution Electron Microscopy, 0000 (31 May 1984); doi: 10.1117/12.941348
Proc. SPIE 0463, Diffusion Of Be And Mn During Damage Recovery Of Ion Implanted GaAs, 0000 (31 May 1984); doi: 10.1117/12.941349
Proc. SPIE 0463, Hydrogen Implantation Into Gallium Arsenide: Range And Damage Distributions, 0000 (31 May 1984); doi: 10.1117/12.941350
Proc. SPIE 0463, Low Temperature Native Oxide Reduction From GaAs Surfaces, 0000 (31 May 1984); doi: 10.1117/12.941351
Proc. SPIE 0463, Secondary Ion Mass Spectrometry Of Semiconductors, 0000 (31 May 1984); doi: 10.1117/12.941352
Proc. SPIE 0463, Oxidation Of Singular And Vicinal Surfaces Of Silicon: The Structure Of Si-Si0[sub]2[/sub] Interface, 0000 (31 May 1984); doi: 10.1117/12.941353
Proc. SPIE 0463, Effect Of Heating Rate End Annealing Temperature On Twin Formation In As[sup]+[/sup] Implanted (lll) Silicon, 0000 (31 May 1984); doi: 10.1117/12.941354
Proc. SPIE 0463, The Formation Of Amorphous Layers By The Implantation Of Arsenic And Phosphorus Into Silicon, 0000 (31 May 1984); doi: 10.1117/12.941355
Proc. SPIE 0463, Comparison Of Damage Profiles Obtained By Angle Lapping/Staining And Cross-Sectional Transmission Electron Microscopy, 0000 (31 May 1984); doi: 10.1117/12.941356
Proc. SPIE 0463, Optical Properties Of GaAs-GaAlAs Quantum Well Structures, 0000 (31 May 1984); doi: 10.1117/12.941357
Proc. SPIE 0463, Polarization Sensitive Raman Microprobe Studies Of Local Crystal Quality In Laser Annealed Silicon, 0000 (31 May 1984); doi: 10.1117/12.941358
Proc. SPIE 0463, Quantitative Analysis Of Phosphosilicate Glass Films On Silicon Wafers For Calibration Of X-Ray Fluorescence Spectrometry Standards, 0000 (31 May 1984); doi: 10.1117/12.941359
Proc. SPIE 0463, Mode Conversion Of Acoustooptic Interaction In Crossed Channel Waveguide, 0000 (31 May 1984); doi: 10.1117/12.941360
Proc. SPIE 0463, The Characteristics Of Oxidation Of Polycrystalline Silicon Films In VLSI, 0000 (31 May 1984); doi: 10.1117/12.941361
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