PROCEEDINGS VOLUME 0524
1985 LOS ANGELES TECHNICAL SYMPOSIUM | 21-25 JANUARY 1985
Spectroscopic Characterization Techniques for Semiconductor Technology II
IN THIS VOLUME

0 Sessions, 21 Papers, 0 Presentations
All Papers  (21)
1985 LOS ANGELES TECHNICAL SYMPOSIUM
21-25 January 1985
Los Angeles, United States
All Papers
Proc. SPIE 0524, An Overview Of Surface Analysis Techniques And Their Applications In The Semiconductor Industry (New Developments In Esca), 0000 (28 June 1985); doi: 10.1117/12.946313
Proc. SPIE 0524, Application Of X-Ray Diffraction Techniques To Semiconductor Materials Characterization, 0000 (28 June 1985); doi: 10.1117/12.946314
Proc. SPIE 0524, Studies Of The Si/SiO2 Interface Using Synchrotron Radiation, 0000 (28 June 1985); doi: 10.1117/12.946315
Proc. SPIE 0524, Ion Beam Spectroscopy For III - V Semiconductor Characterization, 0000 (28 June 1985); doi: 10.1117/12.946316
Proc. SPIE 0524, Deep - Level Transient Spectroscopy: From Characterization To Electronic Defect Identification, 0000 (28 June 1985); doi: 10.1117/12.946317
Proc. SPIE 0524, Impurity Site Determination From High Resolution Localized Vibrational Mode Infrared Absorption Measurements, 0000 (28 June 1985); doi: 10.1117/12.946318
Proc. SPIE 0524, Deep Level Derivative Spectroscopy Of Semiconductors By Wavelength Modulation Techniques, 0000 (28 June 1985); doi: 10.1117/12.946319
Proc. SPIE 0524, Infrared Absorption Spectroscopy For The Characterization Of Oxygen In Silicon, 0000 (28 June 1985); doi: 10.1117/12.946320
Proc. SPIE 0524, Deep Level Studies Of Undoped CdTe, 0000 (28 June 1985); doi: 10.1117/12.946321
Proc. SPIE 0524, The Dynamics Of Reflection High Energy Electron Diffraction Intensity Behaviour As A Probe Of Crystal Growth: Computer Simulations And Measurements During Molecular Beam Epitaxial Growth Of GaAs/AlXGa1-XAs(100), 0000 (28 June 1985); doi: 10.1117/12.946322
Proc. SPIE 0524, Photoreflectance Characterization Of GaAs/A1GaAs Thin Films, Heterojunctions And Multiple Quantum Well Structures, 0000 (28 June 1985); doi: 10.1117/12.946323
Proc. SPIE 0524, Nonlinear And Time Resolved Studies Of Native Defects In CDSE., 0000 (28 June 1985); doi: 10.1117/12.946324
Proc. SPIE 0524, Faraday Rotation And Ellipticity In Silicon Mosfets: Properties Of Tne 2D Electron Gas, 0000 (28 June 1985); doi: 10.1117/12.946325
Proc. SPIE 0524, Picosecond To Microsecond Decay Of Photoinduced Absorption In Hydrogenated Amorphous Silicon, 0000 (28 June 1985); doi: 10.1117/12.946326
Proc. SPIE 0524, EELS And XPS Investigation On Amorphous Silicon Carbide Alloy Film, 0000 (28 June 1985); doi: 10.1117/12.946327
Proc. SPIE 0524, Raman Spectroscopy Study Of Polish-Induced Surface Strain In <100> And <111> GaAs and InP, 0000 (28 June 1985); doi: 10.1117/12.946328
Proc. SPIE 0524, Characterization Of Amorphous And Polycrystalline Si and Ge Films, 0000 (28 June 1985); doi: 10.1117/12.946329
Proc. SPIE 0524, Raman Scattering From Phonons And Magnons In Magnetic Semiconductor, MnTe, 0000 (28 June 1985); doi: 10.1117/12.946330
Proc. SPIE 0524, Raman Scattering Determination Of Carrier Concentration And Surface Space Charge Layer IN <100> n-GaAs, 0000 (28 June 1985); doi: 10.1117/12.946331
Proc. SPIE 0524, Elastic Electron Tunneling Spectroscopy On Niobium/A-Silicon Oxide/Lead Junctions, 0000 (28 June 1985); doi: 10.1117/12.946332
Proc. SPIE 0524, Electron Paramagnetic Resonance Characterization Of Defects In Semiconductors, 0000 (28 June 1985); doi: 10.1117/12.946333
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