PROCEEDINGS VOLUME 0530
1985 LOS ANGELES TECHNICAL SYMPOSIUM | 21-25 JANUARY 1985
Advanced Applications of Ion Implantation
IN THIS VOLUME

0 Sessions, 35 Papers, 0 Presentations
All Papers  (35)
1985 LOS ANGELES TECHNICAL SYMPOSIUM
21-25 January 1985
Los Angeles, United States
All Papers
Proc. SPIE 0530, MeV Implantation In Semiconductors, 0000 (9 April 1985); doi: 10.1117/12.946460
Proc. SPIE 0530, Performance Of The MV-H2O Ion Implanter, 0000 (9 April 1985); doi: 10.1117/12.946461
Proc. SPIE 0530, The IONEX MeV Implanter System, 0000 (9 April 1985); doi: 10.1117/12.946462
Proc. SPIE 0530, MeV Implantation For CMOS Applications, 0000 (9 April 1985); doi: 10.1117/12.946463
Proc. SPIE 0530, MeV Implantation In The III-V's, 0000 (9 April 1985); doi: 10.1117/12.946464
Proc. SPIE 0530, MeV Implantation Of N-Type Dopants Into GaAs, 0000 (9 April 1985); doi: 10.1117/12.946465
Proc. SPIE 0530, High Current Implantation Systems For CMOS, 0000 (9 April 1985); doi: 10.1117/12.946466
Proc. SPIE 0530, Phosphorus In Antimony : A Case Study In Implant Cross-Contamination, 0000 (9 April 1985); doi: 10.1117/12.946467
Proc. SPIE 0530, Avoidance Of Planar Channeling Effects In Si (100), 0000 (9 April 1985); doi: 10.1117/12.946468
Proc. SPIE 0530, The Influence Of Ion Implantation On Solid Phase Epitaxy Of Amorphous Silicon Deposited By LPCVD, 0000 (9 April 1985); doi: 10.1117/12.946469
Proc. SPIE 0530, Ionized Clusters: A Technique For Low Energy Ion Beam Deposition, 0000 (9 April 1985); doi: 10.1117/12.946470
Proc. SPIE 0530, Characteristics Of SiO[sub]2[/sub] Films Deposited By Ionized Nozzle-Beam Technique, 0000 (9 April 1985); doi: 10.1117/12.946471
Proc. SPIE 0530, PREDICT - A New Design Tool For Shallow Junction Processes, 0000 (9 April 1985); doi: 10.1117/12.946472
Proc. SPIE 0530, Wafer Temperature Rise In Rapid Thermal Processing (RTP): A Study Of Chamber Effects And Hulk Silicon Material Parameters, 0000 (9 April 1985); doi: 10.1117/12.946473
Proc. SPIE 0530, Modeling Of Diffusion During Rapid Thermal Processing, 0000 (9 April 1985); doi: 10.1117/12.946474
Proc. SPIE 0530, Ion Beam Mixing In Silicon Systems, 0000 (9 April 1985); doi: 10.1117/12.946475
Proc. SPIE 0530, Numerical Calculations Of Effective Barrier Heights Of Metal/Ge Contacts Formed By Ion Implantation, 0000 (9 April 1985); doi: 10.1117/12.946476
Proc. SPIE 0530, Xenon Irradiation-Induced Changes In CrSi[sub]2[/sub] Thin Films, 0000 (9 April 1985); doi: 10.1117/12.946477
Proc. SPIE 0530, Studies On The Rules For Amorphous Phase Formation By Ion-Mixing In Metallic Systems, 0000 (9 April 1985); doi: 10.1117/12.946478
Proc. SPIE 0530, Alloying Au-Ge With Gaas By Ion Beam Mixing, 0000 (9 April 1985); doi: 10.1117/12.946479
Proc. SPIE 0530, Investigation Of Formation Kinetics Of CrSi[sub]2[/sub], TaSi[sub]2[/sub] And Pt[sub]2[/sub]Si By Ion Beam Mixing, 0000 (9 April 1985); doi: 10.1117/12.946480
Proc. SPIE 0530, Experimental Investigations On The Oxidation Of Cobalt Disilicide(CoSi[sub]2[/sub]), 0000 (9 April 1985); doi: 10.1117/12.946481
Proc. SPIE 0530, Rapid Thermal Annealing Of Ion Implanted Ti Films On Si, 0000 (9 April 1985); doi: 10.1117/12.946482
Proc. SPIE 0530, Materials Characterization Tools For Advanced Ion Beam Processes, 0000 (9 April 1985); doi: 10.1117/12.946483
Proc. SPIE 0530, Resistivity Monitoring For Ion Beam Processes, 0000 (9 April 1985); doi: 10.1117/12.946484
Proc. SPIE 0530, Characterization Of Material And Optical Effects In Annealed, Proton Irradiated N-Type GaAs, 0000 (9 April 1985); doi: 10.1117/12.946485
Proc. SPIE 0530, Use Of Thermal Waves To Measure Dose And Uniformity Of Si[sup]+[/sup] And Be[sup]+[/sup] Implants Into GaAs, 0000 (9 April 1985); doi: 10.1117/12.946486
Proc. SPIE 0530, The Implantation Of MeV Er Into Si, 0000 (9 April 1985); doi: 10.1117/12.946487
Proc. SPIE 0530, Ultra-High-Resolution Dose Uniformity Monitoring With Thermal Waves, 0000 (9 April 1985); doi: 10.1117/12.946488
Proc. SPIE 0530, Using Six-Point Probe Meter Models 101 And 101C, 0000 (9 April 1985); doi: 10.1117/12.946489
Proc. SPIE 0530, Thermal Annealing Behavior Of Hydrogen-Free Amorphous Silicon And Germanium, 0000 (9 April 1985); doi: 10.1117/12.946490
Proc. SPIE 0530, Formation Of Silicon On Insulator Structures By Ion Implantation, 0000 (9 April 1985); doi: 10.1117/12.946491
Proc. SPIE 0530, An Overview Of SOI By Implantation Of Oxygen: Materials, Devices And Circuits, 0000 (9 April 1985); doi: 10.1117/12.946492
Proc. SPIE 0530, Buried Oxide Formation By Ion Implantation, 0000 (9 April 1985); doi: 10.1117/12.946493
Proc. SPIE 0530, The Microstructure Of High Dose Oxygen Implanted Si And Its Dependence On Implantation Conditions, 0000 (9 April 1985); doi: 10.1117/12.946494
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