PROCEEDINGS VOLUME 0539
1985 MICROLITHOGRAPHY CONFERENCES | 11-14 MARCH 1985
Advances in Resist Technology and Processing II
IN THIS VOLUME

0 Sessions, 44 Papers, 0 Presentations
All Papers  (44)
1985 MICROLITHOGRAPHY CONFERENCES
11-14 March 1985
Santa Clara, United States
All Papers
Proc. SPIE 0539, Dissolution Kinetics Of E-Beam Resists, 0000 (18 April 1985); doi: 10.1117/12.947807
Proc. SPIE 0539, Use Of A Quartz Crystal Microbalance Rate Monitor To Examine Photoproduct Effects On Resist Dissolution, 0000 (18 April 1985); doi: 10.1117/12.947808
Proc. SPIE 0539, Dissolution Rates Of Thin Polymer Films Using Laser Interferometry, 0000 (18 April 1985); doi: 10.1117/12.947809
Proc. SPIE 0539, Optical Positive Resist Processing. II. Experimental And Analytical Model Evaluation Of Process Control., 0000 (18 April 1985); doi: 10.1117/12.947810
Proc. SPIE 0539, The Characterization And Simulation Of Spin-Coated Resist Contours, 0000 (18 April 1985); doi: 10.1117/12.947811
Proc. SPIE 0539, Optical Density And Contrast Of Positive Photoresists, 0000 (18 April 1985); doi: 10.1117/12.947812
Proc. SPIE 0539, Impact Of Resist Contrast On Process Latitude: A Modeling Study, 0000 (18 April 1985); doi: 10.1117/12.947813
Proc. SPIE 0539, Structure And Composition Dependence Of The Anisotropy Of The Wet Chemical Etching Of Germanium-Selenium Films, 0000 (18 April 1985); doi: 10.1117/12.947814
Proc. SPIE 0539, Soft X-Ray Spectral Characterization Of Resist Using Synchrotron Radiation, 0000 (18 April 1985); doi: 10.1117/12.947815
Proc. SPIE 0539, Silicon-Containing Resists For Bi-Layer Resist Systems, 0000 (18 April 1985); doi: 10.1117/12.947816
Proc. SPIE 0539, Bilevel Polysiloxane Resist For Ion-Beam And Electron-Beam Lithography, 0000 (18 April 1985); doi: 10.1117/12.947817
Proc. SPIE 0539, High Temperature Positive Photoresist For Use On Reflective Topography And Sputter Applications, 0000 (18 April 1985); doi: 10.1117/12.947818
Proc. SPIE 0539, Silicon Oxynitride As A Barrier Layer In A 3-Layer Photoresist System, 0000 (18 April 1985); doi: 10.1117/12.947819
Proc. SPIE 0539, Poly (Methylstyrene - Dimethylsiloxane) Block Copolymers As Bilevel Resists, 0000 (18 April 1985); doi: 10.1117/12.947820
Proc. SPIE 0539, Effect Of Photoresist Composition On The Origin Of The Interfacial Layer In The Bilevel System., 0000 (18 April 1985); doi: 10.1117/12.947821
Proc. SPIE 0539, A Totally Aqueous Developable Bilayer Resist System, 0000 (18 April 1985); doi: 10.1117/12.947822
Proc. SPIE 0539, Modeling Planarization With Polymers, 0000 (18 April 1985); doi: 10.1117/12.947823
Proc. SPIE 0539, Improvements To The Dry-Etch Resistance Of Sensitive Positive-Working Electron Resists, 0000 (18 April 1985); doi: 10.1117/12.947824
Proc. SPIE 0539, An Aqueous Developable Deep UV/Electron Beam Negative Resist, 0000 (18 April 1985); doi: 10.1117/12.947825
Proc. SPIE 0539, Negative-Working E-Beam Copolymers, 0000 (18 April 1985); doi: 10.1117/12.947826
Proc. SPIE 0539, Plasma-Developable Electron-Beam Resists, 0000 (18 April 1985); doi: 10.1117/12.947827
Proc. SPIE 0539, Submicron Optical Lithography Utilizing A Negative Deep UV Resist MRS, 0000 (18 April 1985); doi: 10.1117/12.947828
Proc. SPIE 0539, Inorganic Resists Based On Photo-Doped As-S Films, 0000 (18 April 1985); doi: 10.1117/12.947829
Proc. SPIE 0539, Self-Developing Polysilane Deep-UV Resists - Photochemistry, Photophysics, And Submicron Lithography, 0000 (18 April 1985); doi: 10.1117/12.947830
Proc. SPIE 0539, Recent Advances In Photoimagable Polyimides, 0000 (18 April 1985); doi: 10.1117/12.947831
Proc. SPIE 0539, A Series Of Azide-Phenolic Resin Resists For The Range Of Deep UV To Visible Light, 0000 (18 April 1985); doi: 10.1117/12.947832
Proc. SPIE 0539, Azide-Phenolic Resin Resists Sensitive To Visible Light, 0000 (18 April 1985); doi: 10.1117/12.947834
Proc. SPIE 0539, Image Reversal Of Positive Photoresist A New Tool For Advancing Integrated Circuit Fabrication, 0000 (18 April 1985); doi: 10.1117/12.947835
Proc. SPIE 0539, Linewidth Control In Optical Projection Printing: Influence Of Resist Parameters, 0000 (18 April 1985); doi: 10.1117/12.947836
Proc. SPIE 0539, In-Line Automatic Photoresist Process Control, 0000 (18 April 1985); doi: 10.1117/12.947837
Proc. SPIE 0539, Plasma Performance Of Positive Resist Systems Using Spin-On Antireflective Coatings In Cl[sub]2[/sub]/Sf[sub]6[/sub], Chf[sub]3[/sub]/O[sub]2[/sub] And Cc1[sub]4[/sub] Plasmas, 0000 (18 April 1985); doi: 10.1117/12.947838
Proc. SPIE 0539, A New High Performance Negative Photoresist For Microlithography, 0000 (18 April 1985); doi: 10.1117/12.947839
Proc. SPIE 0539, A New Class Of Bilevel And Mono-Level Positive Resist Systems Based On A Chemically Stable Imide Polymer, 0000 (18 April 1985); doi: 10.1117/12.947840
Proc. SPIE 0539, Optimization Of Resist Optical Density For High Resolution Lithography On Reflective Surfaces, 0000 (18 April 1985); doi: 10.1117/12.947841
Proc. SPIE 0539, Effects Of Dye Additions On The Exposure And Development Characteristics Of Positive Photoresists, 0000 (18 April 1985); doi: 10.1117/12.947842
Proc. SPIE 0539, An Ultra High Temperature Positive Photoresist, 0000 (18 April 1985); doi: 10.1117/12.947843
Proc. SPIE 0539, Dissolution Rate Studies Of Some Metal-Ion-Free Developers During Various Modes Of Automated Spray Development, 0000 (18 April 1985); doi: 10.1117/12.947844
Proc. SPIE 0539, A Review Of Contrast In Positive Photoresists, 0000 (18 April 1985); doi: 10.1117/12.947845
Proc. SPIE 0539, High Temperature Post Exposure Bake (HTPEB) For AZ® 4000 Photoresist, 0000 (18 April 1985); doi: 10.1117/12.947846
Proc. SPIE 0539, A Novel, High Contrast Positive Photoresist System, 0000 (18 April 1985); doi: 10.1117/12.947847
Proc. SPIE 0539, Plasma Tailoring Of Photoresist For High Performance Mixer Diodes, 0000 (18 April 1985); doi: 10.1117/12.947848
Proc. SPIE 0539, High Contrast Positive Resist II, 0000 (18 April 1985); doi: 10.1117/12.947849
Proc. SPIE 0539, EBR-9 Development In Heated Environment, 0000 (18 April 1985); doi: 10.1117/12.947850
Proc. SPIE 0539, Two Anti-Reflective Coatings For Use Over Highly Reflective Topography, 0000 (18 April 1985); doi: 10.1117/12.947851
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