PROCEEDINGS VOLUME 0631
1986 MICROLITHOGRAPHY CONFERENCES | 10-12 MARCH 1986
Advances in Resist Technology and Processing III
IN THIS VOLUME

0 Sessions, 44 Papers, 0 Presentations
All Papers  (44)
1986 MICROLITHOGRAPHY CONFERENCES
10-12 March 1986
Santa Clara, United States
All Papers
Proc. SPIE 0631, Poly(3-Butenyltrimethylsilane Sulfone): A Sensitive Positive Electron-Beam Resist For Two-Layer Systems, 0000 (9 July 1986); doi: 10.1117/12.963618
Proc. SPIE 0631, Resist Characterization On Reflecting Substrates, 0000 (9 July 1986); doi: 10.1117/12.963619
Proc. SPIE 0631, Preparation And Lithographic Properties Of Poly(Trimethylsilylmethyl Methacrylate-Co-Chloromethyl Styrene), 0000 (9 July 1986); doi: 10.1117/12.963620
Proc. SPIE 0631, Nanosecond Proton And Helium Ion Pulse Radiolysis Studies On Polystyrene, 0000 (9 July 1986); doi: 10.1117/12.963621
Proc. SPIE 0631, A 2-Layer Resist System Derived From Trimethylsilylstyrene, 0000 (9 July 1986); doi: 10.1117/12.963622
Proc. SPIE 0631, Desire : A Novel Dry Developed Resist System, 0000 (9 July 1986); doi: 10.1117/12.963623
Proc. SPIE 0631, Synthesis And Lithographic Characterization Of A Novel Organosilicon Novolac Resin, 0000 (9 July 1986); doi: 10.1117/12.963624
Proc. SPIE 0631, Microplastic Structures, 0000 (9 July 1986); doi: 10.1117/12.963625
Proc. SPIE 0631, A Novel, Aqueous Surface Treatment To Thermally Stabilize High Resolution Positive Photoresist Images*, 0000 (9 July 1986); doi: 10.1117/12.963626
Proc. SPIE 0631, A New Class Of Resins For Deep Ultraviolet Photoresists, 0000 (9 July 1986); doi: 10.1117/12.963627
Proc. SPIE 0631, High Resolution Positive Photoresists, 0000 (9 July 1986); doi: 10.1117/12.963628
Proc. SPIE 0631, Resists For Use In 248 Nm Excimer Laser Lithography, 0000 (9 July 1986); doi: 10.1117/12.963629
Proc. SPIE 0631, Methacrylamide Copolymer Resists For Electron Beam Lithography, 0000 (9 July 1986); doi: 10.1117/12.963630
Proc. SPIE 0631, Reconsideration Of Fundamental Processes And Molecular Design Principles For High Sensitivity Dry Developable X-Ray Resist, 0000 (9 July 1986); doi: 10.1117/12.963631
Proc. SPIE 0631, A Quantitative Assessment Of Image Reversal, A Candidate For A Submicron Process With Improved Linewidth Control, 0000 (9 July 1986); doi: 10.1117/12.963632
Proc. SPIE 0631, Resist Characterization And Optimization Using A Hevelonment Rimulation Romnuter Nrooram, Prostm., 0000 (9 July 1986); doi: 10.1117/12.963633
Proc. SPIE 0631, A Membrane Model For Positive Photoresist Development, 0000 (9 July 1986); doi: 10.1117/12.963634
Proc. SPIE 0631, Submicron Optical Lithography: Enhanced Resolution And Depth Of Focus Using Advanced Processing Materials And Process Optimization, 0000 (9 July 1986); doi: 10.1117/12.963635
Proc. SPIE 0631, The Application Of Cem-420 In Photoresist Imaging Over Reflective Topographical Metal Substrate, 0000 (9 July 1986); doi: 10.1117/12.963636
Proc. SPIE 0631, Contrast Enhancement Materials. Effects Of Process Variables On Critical Dimension Control With Altilith Cem-420., 0000 (9 July 1986); doi: 10.1117/12.963637
Proc. SPIE 0631, Photochemical Image Enhancement (PIE), 0000 (9 July 1986); doi: 10.1117/12.963638
Proc. SPIE 0631, Thin Silicon Films Used As Antireflection Coatings For Metal Coated Substrates, 0000 (9 July 1986); doi: 10.1117/12.963639
Proc. SPIE 0631, New Deep Uv Dyeable Negative Resist For CCD Micro Color Filter, 0000 (9 July 1986); doi: 10.1117/12.963640
Proc. SPIE 0631, Surface Tension Effects In Microlithography - Striations, 0000 (9 July 1986); doi: 10.1117/12.963641
Proc. SPIE 0631, Photoimageable Polyimide: A Dielectric Material For High Aspect Ratio Structures, 0000 (9 July 1986); doi: 10.1117/12.963642
Proc. SPIE 0631, A New Two-Layer Photoresist., 0000 (9 July 1986); doi: 10.1117/12.963643
Proc. SPIE 0631, Productivity Enhancement Through Afterglow Photoresist Removal, 0000 (9 July 1986); doi: 10.1117/12.963644
Proc. SPIE 0631, Reduction Of Proximity Reflective Notching On A Double Metal Vlsi Process By High Temperature Post Exposure Baked, 0000 (9 July 1986); doi: 10.1117/12.963645
Proc. SPIE 0631, A Positive Photoresist Optimized For Both I-Line And UV-3 Exposure, 0000 (9 July 1986); doi: 10.1117/12.963646
Proc. SPIE 0631, High Contrast Positive Resist(S) For Use In Megabit Processing With Broad Process Latitude, 0000 (9 July 1986); doi: 10.1117/12.963647
Proc. SPIE 0631, EPA 914 IR - A Positive Resist With Built-In Image Reversal (IR) Capabilities For Ulsi Technology, 0000 (9 July 1986); doi: 10.1117/12.963648
Proc. SPIE 0631, Functional Characterization Of Positive Optical Resists, 0000 (9 July 1986); doi: 10.1117/12.963649
Proc. SPIE 0631, A New Response Surface Analysis Procedure For Evaluating Process Control In Photolithography, 0000 (9 July 1986); doi: 10.1117/12.963650
Proc. SPIE 0631, Modeling The Dependence Of Photoresist Contrast And Linewidth On Processing Variables, 0000 (9 July 1986); doi: 10.1117/12.963651
Proc. SPIE 0631, Advanced Topics In Lithography Modeling, 0000 (9 July 1986); doi: 10.1117/12.963652
Proc. SPIE 0631, A Method For Generating Sloped Contact Holes Using A Cantilever Resist Structure, 0000 (9 July 1986); doi: 10.1117/12.963653
Proc. SPIE 0631, Antireflective Coating Material For Highly Reflective Surfaces With Topography, 0000 (9 July 1986); doi: 10.1117/12.963654
Proc. SPIE 0631, Optimized Material For Bottom Layer Of Trilevel Resist System, 0000 (9 July 1986); doi: 10.1117/12.963655
Proc. SPIE 0631, To Layer Resist For Plasma Etching, 0000 (9 July 1986); doi: 10.1117/12.963656
Proc. SPIE 0631, Simultaneous Vapor Deposition Of Metal And Monomeric Compounds: Lithographic Applications, 0000 (9 July 1986); doi: 10.1117/12.963657
Proc. SPIE 0631, Polydimethylglutarimide (PMGI) Resist - A Progress Report, 0000 (9 July 1986); doi: 10.1117/12.963658
Proc. SPIE 0631, Improved Bilayer Resist System Using Contrast-Enhanced Lithography With Water-Soluble Photopolymer, 0000 (9 July 1986); doi: 10.1117/12.963659
Proc. SPIE 0631, Optimization Of A Bilayer Resist Process For Polysilicon Gate Lithography, 0000 (9 July 1986); doi: 10.1117/12.963660
Proc. SPIE 0631, Pcm Resist Process With Rie Development Method Applied For The Aluminum Etching Process, 0000 (9 July 1986); doi: 10.1117/12.963661
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