PROCEEDINGS VOLUME 0659
1986 INTERNATIONAL SYMPOSIUM/INNSBRUCK | 15-18 APRIL 1986
Materials Technologies for Infrared Detectors
IN THIS VOLUME

0 Sessions, 30 Papers, 0 Presentations
All Papers  (30)
1986 INTERNATIONAL SYMPOSIUM/INNSBRUCK
15-18 April 1986
Innsbruck, Austria
All Papers
Proc. SPIE 0659, Infrared Detector Materials Research - A Viewpoint, 0000 (22 November 1986); doi: 10.1117/12.938531
Proc. SPIE 0659, Cadmium Mercury Telluride - A UK Perspective, 0000 (22 November 1986); doi: 10.1117/12.938532
Proc. SPIE 0659, Alloying Effects On Hg1-xCdxTe Electronic Structure, 0000 (22 November 1986); doi: 10.1117/12.938533
Proc. SPIE 0659, II-VI Semiconductor Superlattices : New Infrared Materials, 0000 (22 November 1986); doi: 10.1117/12.938534
Proc. SPIE 0659, Generalized Theory Of Electroreflectance With Applications To Materials Characterization, 0000 (22 November 1986); doi: 10.1117/12.938535
Proc. SPIE 0659, Characterization of p-type Hg1_xCdxTe by infrared reflectance, 0000 (22 November 1986); doi: 10.1117/12.938536
Proc. SPIE 0659, Cathodic Electrochemical Modifications Of Cadmium Telluride Surfaces Formation Of Thin Cadmium Layers, 0000 (22 November 1986); doi: 10.1117/12.938537
Proc. SPIE 0659, Electrical Characterisation Of Epitaxial Mercury Cadmium Telluride (CMT), 0000 (22 November 1986); doi: 10.1117/12.938538
Proc. SPIE 0659, Electrochemical And Electrooptical Investigation Of Cadmium Mercury Telluride And Zinc Mercury Telluride, 0000 (22 November 1986); doi: 10.1117/12.938539
Proc. SPIE 0659, IR Material Characterization, 0000 (22 November 1986); doi: 10.1117/12.938540
Proc. SPIE 0659, Experimental Evidence And Characterization Of Resonant Impurity Levels By Magneto-Transport Experiments Under Hydrostatic Pressure In HgCdTe., 0000 (22 November 1986); doi: 10.1117/12.938541
Proc. SPIE 0659, Damage and rapid thermal annealing of In implanted Hg[sub]0.3[/sub][sup]Cd[/sup]0.7[sup]Te[/sup], 0000 (22 November 1986); doi: 10.1117/12.938542
Proc. SPIE 0659, Electrical And Physical Properties Of High Quality Liquid Phase Epitaxy Of Hg[sub]0.78[/sub][sup]Cd[/sup][sub]0.22[/sub][sup]Te[/sup] On CdZnTe, 0000 (22 November 1986); doi: 10.1117/12.938543
Proc. SPIE 0659, Quantitative Study Of The 0 Giant Oscillation In Hg0.8 Cd0.12 Te Near The SM-SC Transition Under Hydrostatic Pressure, 0000 (22 November 1986); doi: 10.1117/12.938544
Proc. SPIE 0659, High-Magnetic Field Characterisation Of (Hg,Cd)Te Detectors, 0000 (22 November 1986); doi: 10.1117/12.938545
Proc. SPIE 0659, Growth of Hg[sub]1-x[/sub]Cd[sub]x[/sub]Te-epitaxial Layers By A Multi-Slice LPE Apparatus, 0000 (22 November 1986); doi: 10.1117/12.938546
Proc. SPIE 0659, Growth Of Cadmium Mercury Telluride (CMT) By Mercury-Rich Liquid Phase Epitaxy (LPE), 0000 (22 November 1986); doi: 10.1117/12.938547
Proc. SPIE 0659, The Effect Of Annealing Cadmium Telluride In Cadmium Or Mercury Vapours, 0000 (22 November 1986); doi: 10.1117/12.938548
Proc. SPIE 0659, THM single crystal CMT material, 0000 (22 November 1986); doi: 10.1117/12.938549
Proc. SPIE 0659, Growth of Hg[sub]1-x[/sub]Cd[sub]x[/sub]Te from Te Solvent By The Travelling Heater Methode, 0000 (22 November 1986); doi: 10.1117/12.938550
Proc. SPIE 0659, Low Temperature Epitaxial Growth of II-VI Semiconductors, 0000 (22 November 1986); doi: 10.1117/12.938551
Proc. SPIE 0659, First (Hg,Zn)Te Infrared Detectors, 0000 (22 November 1986); doi: 10.1117/12.938552
Proc. SPIE 0659, MBE Growth Of CdTe And ZnCdTe On GaAs Substrates, 0000 (22 November 1986); doi: 10.1117/12.938553
Proc. SPIE 0659, Epitaxial Growth Of CVD CdZnTe As Substrate For HgCdTe Detectors, 0000 (22 November 1986); doi: 10.1117/12.938554
Proc. SPIE 0659, Thermal Imaging Using Indium Doped Silicon, 0000 (22 November 1986); doi: 10.1117/12.938555
Proc. SPIE 0659, Barrier Height of Thin-Film (25-200A) PtSi-Si Schottky Diodes, 0000 (22 November 1986); doi: 10.1117/12.938556
Proc. SPIE 0659, A Monolithic 2-Dimensional Focal Plane Array with Charge Coupled-Device Read Out, 0000 (22 November 1986); doi: 10.1117/12.938557
Proc. SPIE 0659, Pyroelectric PVDF Controlled By Poling Improved Conditions, 0000 (22 November 1986); doi: 10.1117/12.938558
Proc. SPIE 0659, Extrinsic Germanium Photoconductor Material: Crystal Growth and Characterization, 0000 (22 November 1986); doi: 10.1117/12.938559
Proc. SPIE 0659, Pb[sub]1-x[/sub]Eu[sub]x[/sub]Se For IR Device Applications, 0000 (22 November 1986); doi: 10.1117/12.938560
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