PROCEEDINGS VOLUME 0792
ADVANCES IN SEMICONDUCTORS AND SEMICONDUCTOR STRUCTURES | 23-27 MARCH 1987
Quantum Well and Superlattice Physics
IN THIS VOLUME

0 Sessions, 43 Papers, 0 Presentations
All Papers  (43)
ADVANCES IN SEMICONDUCTORS AND SEMICONDUCTOR STRUCTURES
23-27 March 1987
Bay Point, FL, United States
All Papers
Proc. SPIE 0792, Electronic Properties Of Quantum Wells In Perturbing Fields, 0000 (11 August 1987); doi: 10.1117/12.940814
Proc. SPIE 0792, Resonant Tunneling: Physics, New Transistors And Superlattice Devices, 0000 (11 August 1987); doi: 10.1117/12.940815
Proc. SPIE 0792, Resonant Tunneling In Double Barrier Heterostructures, 0000 (11 August 1987); doi: 10.1117/12.940816
Proc. SPIE 0792, Prospects For Quantum Integrated Circuits, 0000 (11 August 1987); doi: 10.1117/12.940817
Proc. SPIE 0792, Electrical And Optical Properties Of Semiconductor Doping Superlattices, 0000 (11 August 1987); doi: 10.1117/12.940818
Proc. SPIE 0792, Tunable Electroabsorption And Electroluminescence In GaAs Doping Superlattices, 0000 (11 August 1987); doi: 10.1117/12.940819
Proc. SPIE 0792, Acceptor Impurity States And Their Consequences For Optical Properties Of GaAs Doping Superlattices, 0000 (11 August 1987); doi: 10.1117/12.940820
Proc. SPIE 0792, Quasi-One-Dimensional Doping Superlattices, 0000 (11 August 1987); doi: 10.1117/12.940821
Proc. SPIE 0792, Stability Of Superlattices Under Pressure, 0000 (11 August 1987); doi: 10.1117/12.940822
Proc. SPIE 0792, Silicon-Germanium Superlattices, 0000 (11 August 1987); doi: 10.1117/12.940823
Proc. SPIE 0792, Microscopic Theory Of Zone-Folding And Momentum Mixing In Semiconductor Superlattices And Quantum Wires, 0000 (11 August 1987); doi: 10.1117/12.940824
Proc. SPIE 0792, In-Plane Electric Field Induced Quenching Of Photoluminescence In (Zn,Mn)Se Multiple Quantum Well Structure, 0000 (11 August 1987); doi: 10.1117/12.940825
Proc. SPIE 0792, Excitonic Magnetic Polarons In CdTe/CdMnTe Strained Layer Superlattices, 0000 (11 August 1987); doi: 10.1117/12.940826
Proc. SPIE 0792, Doping Characteristics Of ZnSe-ZnTe Strained Layer Superlattice Grown By Molecular Beam Epitaxy, 0000 (11 August 1987); doi: 10.1117/12.940827
Proc. SPIE 0792, Bandgap Energy Pressure Coefficients In Strained-Layer Structures, 0000 (11 August 1987); doi: 10.1117/12.940828
Proc. SPIE 0792, Reduction Of Photoluminescence Intensity With Magnetic Field In InGaAs/GaAs Single Strained Layer Quantum Wells, 0000 (11 August 1987); doi: 10.1117/12.940829
Proc. SPIE 0792, Physics And Nonlinear Device Applications Of Bulk And Multiple Quantum Well GaAs, 0000 (11 August 1987); doi: 10.1117/12.940830
Proc. SPIE 0792, Theory Of Nonlinear Optical Properties Of Semiconductor Superlattices, 0000 (11 August 1987); doi: 10.1117/12.940831
Proc. SPIE 0792, Optically Detected Tunnelling Between Quantum Wells, 0000 (11 August 1987); doi: 10.1117/12.940832
Proc. SPIE 0792, Exciton Binding Energy In Type-II GaAs-AlAs Quantum Well Heterostructures, 0000 (11 August 1987); doi: 10.1117/12.940833
Proc. SPIE 0792, Photoluminescence Studies Of Coupled Quantum Well Structures In The AlGaAs/GaAs System, 0000 (11 August 1987); doi: 10.1117/12.940834
Proc. SPIE 0792, Infrared Intersubband Absorption At 8.2 m In Doped Superlattices Of GaAs/AlAs, 0000 (11 August 1987); doi: 10.1117/12.940835
Proc. SPIE 0792, Temperature Dependent Optical Studies Of GaAs/AlGaAs Single Quantum Wells, 0000 (11 August 1987); doi: 10.1117/12.940836
Proc. SPIE 0792, Uniaxial Stress As A Probe Of Valence Subband Mixing In Semiconductor Quantum Wells, 0000 (11 August 1987); doi: 10.1117/12.940837
Proc. SPIE 0792, Electric Field Dependence Of Optical Absorption In Quantum Well Structures: Physics And Applications, 0000 (11 August 1987); doi: 10.1117/12.940838
Proc. SPIE 0792, Epitaxial Semiconductor Optical Interference Devices, 0000 (11 August 1987); doi: 10.1117/12.940839
Proc. SPIE 0792, Theory Of An Electro-Optic Modulator Based On Quantum Wells In A Semiconductor etalon, 0000 (11 August 1987); doi: 10.1117/12.940840
Proc. SPIE 0792, Multiple Quantum Well-Based Spatial Light Modulators, 0000 (11 August 1987); doi: 10.1117/12.940841
Proc. SPIE 0792, Photoluminescence Studies Of Type II GaAs/AlAs Quantum Wells Grown By MBE, 0000 (11 August 1987); doi: 10.1117/12.940842
Proc. SPIE 0792, Free-Carrier Absorption And Saturation Of Intervalence-Band Transitions In P-Type Semiconductor Quantum Wells, 0000 (11 August 1987); doi: 10.1117/12.940843
Proc. SPIE 0792, Second-Order Optical Susceptibility Of Strained GeSi/Si Superlattices And Ge/Si Layered Artificial Crystals, 0000 (11 August 1987); doi: 10.1117/12.940844
Proc. SPIE 0792, Quantization Effects In Superlattice Photoelectrodes And Colloidal Semiconductor Particles, 0000 (11 August 1987); doi: 10.1117/12.940845
Proc. SPIE 0792, On The Einstein relation In Superlattices Of Kane - Type Semiconductors In The Presence Of A Quantizing Magnetic Field, 0000 (11 August 1987); doi: 10.1117/12.940846
Proc. SPIE 0792, Optical Absorption In Thin Amorphous Si/SiO[sub]x[/sub] Multilayer Structures, 0000 (11 August 1987); doi: 10.1117/12.940847
Proc. SPIE 0792, Polaronic Excitations In Heterostructures, 0000 (11 August 1987); doi: 10.1117/12.940848
Proc. SPIE 0792, An Efficient Algorithm For Calculating Bound- And Resonant-Energy Spectra, 0000 (11 August 1987); doi: 10.1117/12.940849
Proc. SPIE 0792, Non-Ideal Quantum Well Structures, 0000 (11 August 1987); doi: 10.1117/12.940850
Proc. SPIE 0792, Strain In Isolated FCC Microcrystals And In Strained-Layer Superlattices, 0000 (11 August 1987); doi: 10.1117/12.940851
Proc. SPIE 0792, Dependence Of Subband Energies Of Electron And Hole In Si-Nipi S.L. On The Design Parameters, 0000 (11 August 1987); doi: 10.1117/12.940852
Proc. SPIE 0792, Experimental Determination Of Exciton Binding Energies In GaAs/AlGaAs Quantum Wells, 0000 (11 August 1987); doi: 10.1117/12.940853
Proc. SPIE 0792, Determination Of Critical Thickness In In[sub]x[/sub]Ga[sub]1-x[/sub]As/GaAs Heterostructures By X-Ray Diffraction And Photoluminescence Measurements, 0000 (11 August 1987); doi: 10.1117/12.940854
Proc. SPIE 0792, Band Mixing And Quantum Well Gain, 0000 (11 August 1987); doi: 10.1117/12.940855
Proc. SPIE 0792, Critical Test For The Possibility Of A Solid State Travelling Plasma Wave Amplifier, 0000 (11 August 1987); doi: 10.1117/12.940856
Back to Top