PROCEEDINGS VOLUME 0796
ADVANCES IN SEMICONDUCTORS AND SEMICONDUCTOR STRUCTURES | 23-27 MARCH 1987
Growth of Compound Semiconductors
IN THIS VOLUME

0 Sessions, 32 Papers, 0 Presentations
All Papers  (32)
ADVANCES IN SEMICONDUCTORS AND SEMICONDUCTOR STRUCTURES
23-27 March 1987
Bay Point, FL, United States
All Papers
Proc. SPIE 0796, Growth And Characterization Of GaAs/AlAs Superlattice Alloys, 0000 (20 April 1987); doi: 10.1117/12.940988
Proc. SPIE 0796, Substrate Misorientation Effects On (A1,Ga)As And (Al,Ga)As/GaAs Structures Grown By Molecular Beam Epitaxy, 0000 (20 April 1987); doi: 10.1117/12.940989
Proc. SPIE 0796, Growth And Characterization Of GaAs[sub]1-x[/sub]Sb[sub]x[/sub] On InP By Molecular Beam Epitaxy, 0000 (20 April 1987); doi: 10.1117/12.940990
Proc. SPIE 0796, Anisotropic Growth Processes On GaAs(100) And Ge(100), 0000 (20 April 1987); doi: 10.1117/12.940991
Proc. SPIE 0796, Dislocation Reduction Via Annealing Of GaAs Grown On Si Substrates, 0000 (20 April 1987); doi: 10.1117/12.940992
Proc. SPIE 0796, Study And Characterization Of Low-Pressure AsH[sub]3[/sub] Cracking Cells In Gas Source MBE: Growth Of GaAs And AlGaAs Epitaxy, 0000 (20 April 1987); doi: 10.1117/12.940993
Proc. SPIE 0796, Photoreflectance Spectra Of Al[sub]x[/sub]Ga[sub]1-x[/sub]As, 0000 (20 April 1987); doi: 10.1117/12.940994
Proc. SPIE 0796, Molecular Beam Epitaxy Growth And Characterization Of Lattice Matched And Strained Channel In[sub]x[/sub]Ga[sub]1-X[/sub]As/In[sub]y[/sub]Al[sub]1-y[/sub]As Modulation Doped Stuctures On InP, 0000 (20 April 1987); doi: 10.1117/12.940995
Proc. SPIE 0796, Optical And Magnetic Characterization Of ZnSe/MnSe Superlattices, 0000 (20 April 1987); doi: 10.1117/12.940996
Proc. SPIE 0796, Photoassisted Mbe: A New Approach To Substitutional Doping, 0000 (20 April 1987); doi: 10.1117/12.940997
Proc. SPIE 0796, Crystal Growth Of p-ZnSe And ZnSe p-n Junctions, 0000 (20 April 1987); doi: 10.1117/12.940998
Proc. SPIE 0796, Stoichiometric Property Of ZnSe/GaAs Interface Grown By MOCVD, 0000 (20 April 1987); doi: 10.1117/12.940999
Proc. SPIE 0796, Metalorganic Molecular Beam Epitaxial Growth Of ZnSe And ZnS, 0000 (20 April 1987); doi: 10.1117/12.941000
Proc. SPIE 0796, Molecular Beam Epitaxial Growth Of ZnSe On (100) GaAs And (100) Ge: A Comparative Study Of Material Quality, 0000 (20 April 1987); doi: 10.1117/12.941001
Proc. SPIE 0796, Molecular Beam Epitaxial Growth Of ZnSe On (100) GaAs Substrates, 0000 (20 April 1987); doi: 10.1117/12.941002
Proc. SPIE 0796, MBE Of ZnSe On GaAs Epilayers, 0000 (20 April 1987); doi: 10.1117/12.941003
Proc. SPIE 0796, Measurement Of Band Discontinuities For The Double Heterojunction ZnSe:MnSe:ZnSe, 0000 (20 April 1987); doi: 10.1117/12.941004
Proc. SPIE 0796, Identification Of Substitutional Acceptors In Bridgman-Grown (Cd,Mn)Te, 0000 (20 April 1987); doi: 10.1117/12.941005
Proc. SPIE 0796, Growth Of ZnSe On GaAs Epitaxial Layers In A Dual Chamber Molecular Beam Epitaxy System, 0000 (20 April 1987); doi: 10.1117/12.941006
Proc. SPIE 0796, Computer Simulation, Rheed And Photoluminescence Studies Of The Role Of Growth Kinetics In Mbe Of III-V Semiconductors, 0000 (20 April 1987); doi: 10.1117/12.941007
Proc. SPIE 0796, Monte Carlo Simulation Of The Growth Of ZnSe By MBE, 0000 (20 April 1987); doi: 10.1117/12.941008
Proc. SPIE 0796, Molecular Dynamics Simulation Of Beam Deposition Of Low-Energy (10-100 Ev) Si Atoms On The Si(111) Surface, 0000 (20 April 1987); doi: 10.1117/12.941009
Proc. SPIE 0796, RHEED As A Tool For Examining Kinetic Processes At MBE Grown Surfaces, 0000 (20 April 1987); doi: 10.1117/12.941010
Proc. SPIE 0796, Gas Phase Chemistry And Transport Phenomena In MOCVD Reactors, 0000 (20 April 1987); doi: 10.1117/12.941011
Proc. SPIE 0796, Entrance Effects In A Horizontal Atmospheric-Pressure MOCVD Reactor, 0000 (20 April 1987); doi: 10.1117/12.941012
Proc. SPIE 0796, InAs/GaAs Quantum Well Lasers Grown By Atomic Layer Epitaxy, 0000 (20 April 1987); doi: 10.1117/12.941013
Proc. SPIE 0796, Mechanism Of Crystal Growth Of GaAs In Chemical Vapor Deposition (CVD), 0000 (20 April 1987); doi: 10.1117/12.941014
Proc. SPIE 0796, Defect Characterization In InP Epitaxial Layers Grown By LP-MOCVD, 0000 (20 April 1987); doi: 10.1117/12.941015
Proc. SPIE 0796, Material Properties And Device Application Of GaAs And GaAsP Grown On Si Using Superlattice Intermediate Layers By MOCVD, 0000 (20 April 1987); doi: 10.1117/12.941016
Proc. SPIE 0796, Characteristics Of OMVPE-Grown CdTe And HgCdTe On GaAs, 0000 (20 April 1987); doi: 10.1117/12.941017
Proc. SPIE 0796, Selective Epitaxy Of Quantum Well Structures By Atmospheric Pressure OMCVD, 0000 (20 April 1987); doi: 10.1117/12.941018
Proc. SPIE 0796, Experimental and theoretical investigations on the formation of acceptor-acceptor pair emission in GaAs, 0000 (20 April 1987); doi: 10.1117/12.941019
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