PROCEEDINGS VOLUME 0797
ADVANCES IN SEMICONDUCTORS AND SEMICONDUCTOR STRUCTURES | 23-27 MARCH 1987
Advanced Processing of Semiconductor Devices
IN THIS VOLUME

0 Sessions, 44 Papers, 0 Presentations
All Papers  (44)
ADVANCES IN SEMICONDUCTORS AND SEMICONDUCTOR STRUCTURES
23-27 March 1987
Bay Point, FL, United States
All Papers
Proc. SPIE 0797, Keynote Address Elemental And Compound Semiconductor Devices Today And Beyond: Influence Of Advanced Epitaxial Processes, 0000 (22 April 1987); doi: 10.1117/12.941020
Proc. SPIE 0797, Invited Paper The Formation Of Shallow P+N Junctions Using RTA Of BF2+ And B+ Implanted Si, 0000 (22 April 1987); doi: 10.1117/12.941021
Proc. SPIE 0797, Effects Of Rapid Thermal Processing On Device Reliability, 0000 (22 April 1987); doi: 10.1117/12.941022
Proc. SPIE 0797, Deep Level Generation Centres In Low Temperature Annealed Pre-Amorphised Silicon, 0000 (22 April 1987); doi: 10.1117/12.941023
Proc. SPIE 0797, Invited Paper Is SOI Ready For Circuits Applications?, 0000 (22 April 1987); doi: 10.1117/12.941024
Proc. SPIE 0797, Planarization Of Multilevel Metalization Processes: A Critical Review, 0000 (22 April 1987); doi: 10.1117/12.941025
Proc. SPIE 0797, Formation Of Shallow Junctions With TiN[sub]x[/sub]O[sub]y[/sub]/TiSi[sub]2[/sub] Ohmic Contacts For Self-Aligned Silicide Technology, 0000 (22 April 1987); doi: 10.1117/12.941026
Proc. SPIE 0797, Transient-Enhanced Diffusion In Ion-Implanted Silicon, 0000 (22 April 1987); doi: 10.1117/12.941027
Proc. SPIE 0797, Formation And Nondestructive Characterization Of Ion Implanted Soi Layers, 0000 (22 April 1987); doi: 10.1117/12.941028
Proc. SPIE 0797, Growth And Characterization Of Epitaxial Layers Of Ge On Si Substrates, 0000 (22 April 1987); doi: 10.1117/12.941029
Proc. SPIE 0797, Invited Paper Photochemical Cleaning And Epitaxy Of Si, 0000 (22 April 1987); doi: 10.1117/12.941030
Proc. SPIE 0797, Invited Paper Recent Developments In Reactive Plasma Etching Of III-V Compound Semiconductors, 0000 (22 April 1987); doi: 10.1117/12.941031
Proc. SPIE 0797, Vertical Sidewall Reactive Ion Etching (RIE) Of GaAs and Al[sub]x[/sub]Ga[sub]1[/sub]_[sub]x[/sub]AS (X=0.76) Using BC1[sub]3[/sub]/CC1[sub]2[/sub]F[sub]2[/sub]/He At Equal Rates, 0000 (22 April 1987); doi: 10.1117/12.941032
Proc. SPIE 0797, Invited Paper Novel Chemistry For High Quality, Low Hydrogen PECVD Silicon Nitride Films, 0000 (22 April 1987); doi: 10.1117/12.941033
Proc. SPIE 0797, Formation Of Submicron Silicon-Nitride Patterns By Lift-Off Method Using ECR-CVD, 0000 (22 April 1987); doi: 10.1117/12.941034
Proc. SPIE 0797, Silicon Nitride For Gallium Arsenide Integrated Circuits, 0000 (22 April 1987); doi: 10.1117/12.941035
Proc. SPIE 0797, Modeling Of Energy And Mass Transport In Laser-Assisted CVD I: Surface Morphology, 0000 (22 April 1987); doi: 10.1117/12.941036
Proc. SPIE 0797, Characteristics Of Nonselective Gaas/(A1,Ga)As Heterostructure Etching At Very Low Etch Rates, 0000 (22 April 1987); doi: 10.1117/12.941037
Proc. SPIE 0797, Growth And Characterization Of Wide Gap II-VI Heterostructures, 0000 (22 April 1987); doi: 10.1117/12.941038
Proc. SPIE 0797, Optical Absorption In Low P-Type Hg0.8Cd0.2Te Alloys, 0000 (22 April 1987); doi: 10.1117/12.941039
Proc. SPIE 0797, Impurity Induced Disordering Of Heterojunction Interfaces: Phenomenology And Laser Device Applications, 0000 (22 April 1987); doi: 10.1117/12.941040
Proc. SPIE 0797, Al1-XGaxAs/GaAs Superlattice Disordering By Ion-Implantation And Diffusion: A TEM Study Of Mechanisms, 0000 (22 April 1987); doi: 10.1117/12.941041
Proc. SPIE 0797, Lateral Patterning Of Quantum Well Structures Through Compositional Mixing, 0000 (22 April 1987); doi: 10.1117/12.941042
Proc. SPIE 0797, Self-Aligned-Gate Digital AlGaAs/GaAs Modulation-Doped Field Effect Transistor (MODFET) Processing And Short Channel Effects, 0000 (22 April 1987); doi: 10.1117/12.941043
Proc. SPIE 0797, Low Pressure Chemical Vapor Deposited Tungsten Silicide For GaAs ICs, 0000 (22 April 1987); doi: 10.1117/12.941044
Proc. SPIE 0797, Implant Profiles In GaP, GaAs, InP, And InSb: Influence Of Furnace And Rapid Thermal Annealing, 0000 (22 April 1987); doi: 10.1117/12.941045
Proc. SPIE 0797, High Temperature Stable Metal Contacts On GaAs Based On WSi2 As Diffusion Barrier, Characterized By XPS And Electrical Measurements, 0000 (22 April 1987); doi: 10.1117/12.941046
Proc. SPIE 0797, Invited Paper Recent Progress In Optoelectronic Integrated Circuits (OEICs), 0000 (22 April 1987); doi: 10.1117/12.941047
Proc. SPIE 0797, Invited Paper Grating Surface Emitting, Semiconductor Lasers, 0000 (22 April 1987); doi: 10.1117/12.941048
Proc. SPIE 0797, Reactive Ion Etching (RIE) Of Gratings In Inp For Distributed Feedback (DFB) Lasers Using An Intermediate Dielectric Layer, 0000 (22 April 1987); doi: 10.1117/12.941049
Proc. SPIE 0797, Invited Paper Characterization Of Interfaces Formed By Interrupted OMVPE Growth, 0000 (22 April 1987); doi: 10.1117/12.941050
Proc. SPIE 0797, High Power AlGaAs/GaAs Single Quantum Well Lasers With Chemically Assisted Ion Beam Etched Mirrors, 0000 (22 April 1987); doi: 10.1117/12.941051
Proc. SPIE 0797, Beam-Lead Hybridization Technology For Focal Plane Infrared Detectors, 0000 (22 April 1987); doi: 10.1117/12.941052
Proc. SPIE 0797, Atomistic Simulation Of Stability Properties And Growth Of Strained Layer Structures, 0000 (22 April 1987); doi: 10.1117/12.941053
Proc. SPIE 0797, Effects Of Growth Temperature And Off Oriented (100) Si Substrate On Properties Of CdTe Film Grown By MOCVD, 0000 (22 April 1987); doi: 10.1117/12.941054
Proc. SPIE 0797, On The Gate Capacitance Of MOS Structures Of n-Channel Inversion Layers On Ternary Semiconductors In The Presence Of A Quantizing Magnetic Field, 0000 (22 April 1987); doi: 10.1117/12.941055
Proc. SPIE 0797, Invited Paper GaAs Self-Aligned MESFET Technologies, 0000 (22 April 1987); doi: 10.1117/12.941056
Proc. SPIE 0797, High Transconductance OGFETs, 0000 (22 April 1987); doi: 10.1117/12.941057
Proc. SPIE 0797, Invited Paper Complementary HEMT Logic: Problems Of Threshold Voltage Control And Their Solutions, 0000 (22 April 1987); doi: 10.1117/12.941058
Proc. SPIE 0797, A High-Transconductance AlGaAs/GaAs/AlGaAs Selectively-Doped Double-Heterojunction Fet With Pd-Buried Gate Structure, 0000 (22 April 1987); doi: 10.1117/12.941059
Proc. SPIE 0797, Invited Paper Advances In The Technology For The Permeable Base Transistor, 0000 (22 April 1987); doi: 10.1117/12.941060
Proc. SPIE 0797, Fabrication Process Of Resonant Tunneling Bipolar Transistor (RBT), 0000 (22 April 1987); doi: 10.1117/12.941061
Proc. SPIE 0797, Buried-Channel Insulated Gate Fets On MOCVD Grown Inp/InGaAs/InP, 0000 (22 April 1987); doi: 10.1117/12.941062
Proc. SPIE 0797, Engineering On NPN AlGaAs Heterojunction Bipolar Transistors, 0000 (22 April 1987); doi: 10.1117/12.941063
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