PROCEEDINGS VOLUME 0811
FOURTH INTERNATIONAL SYMPOSIUM ON OPTICAL AND OPTOELECTRONIC APPLIED SCIENCES AND ENGINEERING | MAR 30 - APR 3 1987
Optical Microlithographic Technology for Integrated Circuit Fabrication and Inspection
IN THIS VOLUME

0 Sessions, 25 Papers, 0 Presentations
All Papers  (25)
FOURTH INTERNATIONAL SYMPOSIUM ON OPTICAL AND OPTOELECTRONIC APPLIED SCIENCES AND ENGINEERING
Mar 30 - Apr 3 1987
The Hague, Netherlands
All Papers
Proc. SPIE 0811, Recent Developments In Electron Beam Lithography, 0000 (17 September 1987); doi: 10.1117/12.975590
Proc. SPIE 0811, Mass-Production Of Diffraction Limited Replicated Objective Lenses For Compact-Disc Players., 0000 (17 September 1987); doi: 10.1117/12.975591
Proc. SPIE 0811, CD Control Issues In Submicron Optical Lithography, 0000 (17 September 1987); doi: 10.1117/12.975592
Proc. SPIE 0811, Quality Of Microlithographic Projection Lenses, 0000 (17 September 1987); doi: 10.1117/12.975593
Proc. SPIE 0811, Submicron Optical Lithography With High Resolution I-Line Lens, 0000 (17 September 1987); doi: 10.1117/12.975594
Proc. SPIE 0811, Interference Microscopy Of Surface Relief Structures, 0000 (17 September 1987); doi: 10.1117/12.975595
Proc. SPIE 0811, Practical Photolithography For Modern Semiconductor Production, 0000 (17 September 1987); doi: 10.1117/12.975596
Proc. SPIE 0811, The Mechanism Of The Desire Process, 0000 (17 September 1987); doi: 10.1117/12.975597
Proc. SPIE 0811, Mechanism And Kinetics Of Silylation Of Resist Layers From The Gas Phase, 0000 (17 September 1987); doi: 10.1117/12.975598
Proc. SPIE 0811, A Novel Technique For The Control Of Resist Profiles When Exposing With Steppers., 0000 (17 September 1987); doi: 10.1117/12.975599
Proc. SPIE 0811, Residues Formation And Surface Contamination In Submicronic Definition Multilayers Structures Obtained By Reactive Ion Etching, 0000 (17 September 1987); doi: 10.1117/12.975600
Proc. SPIE 0811, Prediction Of Shelf-Lives Of Positive Photoresists Based On Accelerated Aging Techniques Kinetic Evaluation Of Various Parameters, 0000 (17 September 1987); doi: 10.1117/12.975601
Proc. SPIE 0811, Measurement Facilities On A Laser Ionization Mass Spectrometer, 0000 (17 September 1987); doi: 10.1117/12.975602
Proc. SPIE 0811, Application To Bilayer System With Water-Soluble Contrast Enhancing Material, 0000 (17 September 1987); doi: 10.1117/12.975603
Proc. SPIE 0811, Registration Accuracy And Critical Dimension Control For A 5X Reduction Stepper With Magnification Control, 0000 (17 September 1987); doi: 10.1117/12.975604
Proc. SPIE 0811, I-Line Wafer Stepper Technology For Gallium Arsenide Applications, 0000 (17 September 1987); doi: 10.1117/12.975605
Proc. SPIE 0811, Advances In 1:1 Optical Lithography, 0000 (17 September 1987); doi: 10.1117/12.975606
Proc. SPIE 0811, An Advanced Wafer Stepper For Sub-Micron Fabrication, 0000 (17 September 1987); doi: 10.1117/12.975607
Proc. SPIE 0811, Bilevel System HPR/PMMA, 0000 (17 September 1987); doi: 10.1117/12.975608
Proc. SPIE 0811, Positive Near-UV Resist For Bilayer Lithography, 0000 (17 September 1987); doi: 10.1117/12.975609
Proc. SPIE 0811, Characterization of commercial dyes for PMMA bilayer systems, 0000 (17 September 1987); doi: 10.1117/12.975610
Proc. SPIE 0811, Characterization Of A New Organosilicon Photoresist, 0000 (17 September 1987); doi: 10.1117/12.975611
Proc. SPIE 0811, A Contrast Enhanced Reflectionless Process (CER), 0000 (17 September 1987); doi: 10.1117/12.975612
Proc. SPIE 0811, Vitreous Chalcogenide Gesey Thin Films Obtained By Plasma Enhanced Chemical Vapor Deposition, 0000 (17 September 1987); doi: 10.1117/12.975613
Proc. SPIE 0811, Reactive Ion Etching Of Silicon Dioxide, 0000 (17 September 1987); doi: 10.1117/12.975614
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