PROCEEDINGS VOLUME 0866
1987 SYMPOSIUM ON THE TECHNOLOGIES FOR OPTOELECTRONICS | 17-20 NOVEMBER 1987
Materials and Technologies for Optical Communications
IN THIS VOLUME

0 Sessions, 26 Papers, 0 Presentations
All Papers  (26)
1987 SYMPOSIUM ON THE TECHNOLOGIES FOR OPTOELECTRONICS
17-20 November 1987
Cannes, France
All Papers
Proc. SPIE 0866, Recent Results In Semi-Insulating Indium Phosphide Crystal Growth, 0000 (1 January 1987); doi: 10.1117/12.943566
Proc. SPIE 0866, Infra Red Imaging Technique For Defect Recognition In III-V Wafers, 0000 (1 January 1987); doi: 10.1117/12.943567
Proc. SPIE 0866, Simulation Of Intrinsic Defects Related To The Ion Implantation Of InP Substrates, 0000 (1 January 1987); doi: 10.1117/12.943568
Proc. SPIE 0866, Intermixing In AlAs-GaAs Superlattices, 0000 (1 January 1987); doi: 10.1117/12.943569
Proc. SPIE 0866, Growth Of InP And GaInAsP By MBE Using Gas Sources, 0000 (1 January 1987); doi: 10.1117/12.943570
Proc. SPIE 0866, Molecular Beam Epitaxy Of AlGaInAs For Optoelectronics, 0000 (1 January 1987); doi: 10.1117/12.943571
Proc. SPIE 0866, Photoluminescence Studies Of Epitaxial Layers In InGaAsP/InP And InGaAs/InP Heterostructures, 0000 (1 January 1987); doi: 10.1117/12.943572
Proc. SPIE 0866, Focused Ion Beams For Optoelectronic Technology: A Review., 0000 (1 January 1987); doi: 10.1117/12.943573
Proc. SPIE 0866, Channeled Twin-Ridge Substrate Three-Segmented Large Optical Cavity Structure GaAlAs/GaAs Laser, 0000 (1 January 1987); doi: 10.1117/12.943574
Proc. SPIE 0866, Limitations In Optical System Performance Due To Silicon PIN Photodiode Defects, 0000 (1 January 1987); doi: 10.1117/12.943575
Proc. SPIE 0866, The Surface Recombination Velocity And The Diffusion Length On InGaAs p-i-n Photodiodes, 0000 (1 January 1987); doi: 10.1117/12.943576
Proc. SPIE 0866, InP Passivation By Plasma HF Enhanced Sulphidation Duality Between The Growth And Ionic Bombardment Mechanisms Of The Sulphide Layer, 0000 (1 January 1987); doi: 10.1117/12.943577
Proc. SPIE 0866, Perspectives For Optically Nonlinear Polymers In Optoelectronic Applications, 0000 (1 January 1987); doi: 10.1117/12.943578
Proc. SPIE 0866, Shaping Fibre Preforms From Prefabricated Powders, 0000 (1 January 1987); doi: 10.1117/12.943579
Proc. SPIE 0866, Newest Results In Plasma-Impulse-CVD For Optical Fiber Fabrication, 0000 (1 January 1987); doi: 10.1117/12.943580
Proc. SPIE 0866, A Model For Poling By An Electric Field Of Acceptor-Donor Molecules In A Liquid Crystalline Phase, 0000 (1 January 1987); doi: 10.1117/12.943581
Proc. SPIE 0866, Semiconductor Microcrystals In Porous Glass, 0000 (1 January 1987); doi: 10.1117/12.943582
Proc. SPIE 0866, Dilute Melt Proton Exchange (DMPE) In Y-Cut LiNbO3 For The Fabrication Of Monomode Optical Waveguides (MOWG), 0000 (1 January 1987); doi: 10.1117/12.943583
Proc. SPIE 0866, C.V.D. Techniques For Synthesis Of Fluoride Glass Optical Fibers, 0000 (1 January 1987); doi: 10.1117/12.943584
Proc. SPIE 0866, III-V Heterostructures For Laser Emission In The 2.55 µm Wavelength Region, 0000 (1 January 1987); doi: 10.1117/12.943585
Proc. SPIE 0866, Metal Organic Chemical Vapor Deposition (MOCVD) Growth Of Ga1-XInxAsySb1-y : First Electrical And Optical Characterization Of Materials And Devices, 0000 (1 January 1987); doi: 10.1117/12.943586
Proc. SPIE 0866, Growth And Characterization Of CdxHgl-xTte For Optical Communications, 0000 (1 January 1987); doi: 10.1117/12.943587
Proc. SPIE 0866, Evaluated Performances Of Ga0.96Al0.04Sb Avalanche Photodetectors, 0000 (1 January 1987); doi: 10.1117/12.943588
Proc. SPIE 0866, Slider L.P.E. Of Hgl_xCdxTe From Te-Rich Solutions: A New Method For The Growth Of Any Composition, 0000 (1 January 1987); doi: 10.1117/12.943589
Proc. SPIE 0866, Optimization Of Ion Implantation Technique In Manufacturing HgCdTe Devices For Fiber Optics Communications, 0000 (1 January 1987); doi: 10.1117/12.943590
Proc. SPIE 0866, The Use Of Cd0.7Hg0.3Te Grown On GaAs For Optical Fibre Communication Devices, 0000 (1 January 1987); doi: 10.1117/12.943591
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