PROCEEDINGS VOLUME 0893
1988 LOS ANGELES SYMPOSIUM: O-E/LASE '88 | 11-17 JANUARY 1988
High Power Laser Diodes and Applications
IN THIS VOLUME

0 Sessions, 22 Papers, 0 Presentations
All Papers  (22)
1988 LOS ANGELES SYMPOSIUM: O-E/LASE '88
11-17 January 1988
Los Angeles, CA, United States
All Papers
Proc. SPIE 0893, Power Limits, Efficiency, And Reliability Of 1-D And 2-D Laser Diodes And Diode Arrays, 0000 (9 August 1988); doi: 10.1117/12.944343
Proc. SPIE 0893, Stable, Single-Array-Mode Operation From Phase-Locked Interferometric Arrays Of Index-Guided A1Gaas/Gaas Diode Lasers, 0000 (9 August 1988); doi: 10.1117/12.944344
Proc. SPIE 0893, Single Stripe High Power Laser Diodes Made By Metal-Organic Chemical Vapor Deposition, 0000 (9 August 1988); doi: 10.1117/12.944345
Proc. SPIE 0893, Two-Dimensional Laser Array Technology Comparison: "Stack-And-Rack" Vs. Monolithic, 0000 (9 August 1988); doi: 10.1117/12.944346
Proc. SPIE 0893, High Power Semiconductor Laser Amplifiers, 0000 (9 August 1988); doi: 10.1117/12.944347
Proc. SPIE 0893, Incoherent GaAlAs/GaAs Semiconductor Laser Arrays, 0000 (9 August 1988); doi: 10.1117/12.944348
Proc. SPIE 0893, High Power Quasi-Cw And Cw Laser Diode Bar Arrays, 0000 (9 August 1988); doi: 10.1117/12.944349
Proc. SPIE 0893, Designs For High Power, Single Mode Operation In Broad Stripe Semiconductor Lasers, 0000 (9 August 1988); doi: 10.1117/12.944350
Proc. SPIE 0893, High-Power Edge-And Surface-Emitting AlGaAs Semiconductor Lasers, 0000 (9 August 1988); doi: 10.1117/12.944351
Proc. SPIE 0893, A Model For The Nearly Single Lobed Far-Field In A Diode Array Traveling-Wave Amplifier, 0000 (9 August 1988); doi: 10.1117/12.944352
Proc. SPIE 0893, High Power Laser Diodes For The NASA Direct Detection Laser Transceiver Experiment, 0000 (9 August 1988); doi: 10.1117/12.944353
Proc. SPIE 0893, High Power Diode Laser Research In Mitsubishi Electric, 0000 (9 August 1988); doi: 10.1117/12.944354
Proc. SPIE 0893, InGaAsP/InP High-Power Single-Element Diode Lasers, 0000 (9 August 1988); doi: 10.1117/12.944355
Proc. SPIE 0893, Tolerances For Phase Locking Of Semiconductor Laser Arrays, 0000 (9 August 1988); doi: 10.1117/12.944356
Proc. SPIE 0893, A Simplified Thermal Model For Calculating The Maximum Cw Output Power From Narrow Stripe Geometry InGaAsP/InP Lasers, 0000 (9 August 1988); doi: 10.1117/12.944357
Proc. SPIE 0893, Laser-Assisted Processing Of GaAs-AlGaAs Optoelectronic Devices, 0000 (9 August 1988); doi: 10.1117/12.944358
Proc. SPIE 0893, 0Monolithic Two Dimensional Surface Emitting Arrays Of GaAs/AlGaAs Lasers, 0000 (9 August 1988); doi: 10.1117/12.944359
Proc. SPIE 0893, AlGaAs Surface Emitting Distributed Feedback Laser, 0000 (9 August 1988); doi: 10.1117/12.944360
Proc. SPIE 0893, Improved Performance Buried Heterostructure Window Lasers, 0000 (9 August 1988); doi: 10.1117/12.944361
Proc. SPIE 0893, Laser Cathode Ray Tubes And Their Applications, 0000 (9 August 1988); doi: 10.1117/12.944362
Proc. SPIE 0893, Progress In Single Quantum Well Structures For High Power Laser Device Applications, 0000 (9 August 1988); doi: 10.1117/12.944363
Proc. SPIE 0893, Broad Area Graded Barrier Quantum Well Heterostructure Lasers By Metalorganic Chemical Vapor Deposition For High Power Applications, 0000 (9 August 1988); doi: 10.1117/12.944364
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