PROCEEDINGS VOLUME 0920
SANTA CLARA SYMPOSIUM ON MICROLITHOGRAPHY | 2-4 MARCH 1988
Advances in Resist Technology and Processing V
IN THIS VOLUME

0 Sessions, 51 Papers, 0 Presentations
All Papers  (51)
SANTA CLARA SYMPOSIUM ON MICROLITHOGRAPHY
2-4 March 1988
Santa Clara, CA, United States
All Papers
Proc. SPIE 0920, Zero-Misalignment Lithographic Process Using A Photoresist With Wavelength-Selected Tone, 0000 (1 January 1988); doi: 10.1117/12.968295
Proc. SPIE 0920, Heat Developable Resist For Multilayer Resist Technology, 0000 (1 January 1988); doi: 10.1117/12.968296
Proc. SPIE 0920, MID UV Resist Materials Containing Pyridinium Ylides, 0000 (1 January 1988); doi: 10.1117/12.968297
Proc. SPIE 0920, Negative Bleaching Photoresist (BLEST) For Mid-UV Exposure, 0000 (1 January 1988); doi: 10.1117/12.968298
Proc. SPIE 0920, Aqueous Base Developable Deep UV Resist Systems Based On Novel Monomeric And Polymeric Dissolution Inhibitors, 0000 (1 January 1988); doi: 10.1117/12.968299
Proc. SPIE 0920, Mid-UV Photoresists Combining Chemical Amplification And Dissolution Inhibition, 0000 (1 January 1988); doi: 10.1117/12.968300
Proc. SPIE 0920, New 2-Diazocyclohexane-1,3-Dione Photoactive Compounds For Deep U.V. Lithography, 0000 (1 January 1988); doi: 10.1117/12.968301
Proc. SPIE 0920, Novolac Based Deep-UV Resists, 0000 (1 January 1988); doi: 10.1117/12.968302
Proc. SPIE 0920, An Evaluation Of Nitrobenzyl Ester Chemistry For Chemical Amplification Resists, 0000 (1 January 1988); doi: 10.1117/12.968303
Proc. SPIE 0920, Contrast Enhancement Materials For Mid-Uv Applications, 0000 (1 January 1988); doi: 10.1117/12.968304
Proc. SPIE 0920, Cel Resist Processing For Submicron CMOS And Bipolar Circuits, 0000 (1 January 1988); doi: 10.1117/12.968305
Proc. SPIE 0920, I-Line Lithography Using A New Water-Soluble Contrast Enhancing Material, 0000 (1 January 1988); doi: 10.1117/12.968306
Proc. SPIE 0920, Photobleachable Diazonium Salt-Phenolic Resin Two-Layer Resist System, 0000 (1 January 1988); doi: 10.1117/12.968307
Proc. SPIE 0920, Effects Of Ion Bombardment In Oxygen Plasma Etching, 0000 (1 January 1988); doi: 10.1117/12.968308
Proc. SPIE 0920, Thermal Crosslinking By Unexposed Naphthoquinone Diazides As Diffusion Inhibition Mechanism In The DESIRE Process, 0000 (1 January 1988); doi: 10.1117/12.968309
Proc. SPIE 0920, Aqueous Developable, Negative Working Resist Made Of Chlorinated Novolac Resin, 0000 (1 January 1988); doi: 10.1117/12.968310
Proc. SPIE 0920, "Masking Effect" And "Internal CEL" New Design Concepts For A Positive Working Photoresist, 0000 (1 January 1988); doi: 10.1117/12.968311
Proc. SPIE 0920, Photophysical Investigations Of Spin Cast Novolac Films, 0000 (1 January 1988); doi: 10.1117/12.968312
Proc. SPIE 0920, High Resolution Imaging Over Severe Metal Topography Using Dyed Image Reversal Resist, 0000 (1 January 1988); doi: 10.1117/12.968313
Proc. SPIE 0920, Effect Of Developer Type And Agitation On Dissolution Of Positive Photoresist, 0000 (1 January 1988); doi: 10.1117/12.968314
Proc. SPIE 0920, Evaluation Of An Organosilicon Photoresist For Excimer Laser Lithography, 0000 (1 January 1988); doi: 10.1117/12.968315
Proc. SPIE 0920, A Novel Silicon-Containing Resist For A Bi-Layer Resist System, 0000 (1 January 1988); doi: 10.1117/12.968316
Proc. SPIE 0920, Study Of The Reaction Kinetics Of The Photoresist Aging Process, 0000 (1 January 1988); doi: 10.1117/12.968317
Proc. SPIE 0920, Characterization And Modeling Of High Resolution Positive Photoresists, 0000 (1 January 1988); doi: 10.1117/12.968318
Proc. SPIE 0920, Ladder Structure Silicone Resist PVSS, 0000 (1 January 1988); doi: 10.1117/12.968319
Proc. SPIE 0920, Examination Of The Mechanism Of The Post Exposure Bake Effect, 0000 (1 January 1988); doi: 10.1117/12.968320
Proc. SPIE 0920, A Novel Dry Develop Method Of Photoresist - "Unzipping Development" By Flood UV Irradiation, 0000 (1 January 1988); doi: 10.1117/12.968321
Proc. SPIE 0920, Thermal Processing Of Resist Materials: A Kinetic Approach, 0000 (1 January 1988); doi: 10.1117/12.968322
Proc. SPIE 0920, Submicron Optical Lithography Using Contrast Enhanced Material With Diazonium Salt As A Photobleachable Material, 0000 (1 January 1988); doi: 10.1117/12.968323
Proc. SPIE 0920, Preliminary Performance Characterization Of The DESIRE Process, 0000 (1 January 1988); doi: 10.1117/12.968324
Proc. SPIE 0920, Chemical And Physical Aspects Of Multilayer Resist Processing, 0000 (1 January 1988); doi: 10.1117/12.968325
Proc. SPIE 0920, Experimental Tests Of The Steady-State Model For Oxygen Reactive Ion Etching Of Silicon-Containing Polymers, 0000 (1 January 1988); doi: 10.1117/12.968326
Proc. SPIE 0920, Silicon-Added Bilayer Resist (SABRE) System, 0000 (1 January 1988); doi: 10.1117/12.968327
Proc. SPIE 0920, Alkali-Developable Organosilicon Positive Photoresist(OSPR), 0000 (1 January 1988); doi: 10.1117/12.968328
Proc. SPIE 0920, Lithographic, Photochemical And O[sub]2[/sub] RIE Properties Of Three Polysilane Copolymers, 0000 (1 January 1988); doi: 10.1117/12.968329
Proc. SPIE 0920, A New Silicone-Based Positive Photoresist (SPP) For A Two-Layer Resist System, 0000 (1 January 1988); doi: 10.1117/12.968330
Proc. SPIE 0920, Characterization Of Conditions Required To Implement Submicron Processes Over Topography Using Dry Develop Method(S), 0000 (1 January 1988); doi: 10.1117/12.968331
Proc. SPIE 0920, Fundamentals Of Topographic Substrate Leveling, 0000 (1 January 1988); doi: 10.1117/12.968332
Proc. SPIE 0920, Resist Dissolution Kinetics And Submicron Process Control, 0000 (1 January 1988); doi: 10.1117/12.968333
Proc. SPIE 0920, Novolacs With Alternating P-Cresol & Polyhydroxyphenyl Monomer Units: Developer Cationic Effects And Thermal Properties, 0000 (1 January 1988); doi: 10.1117/12.968334
Proc. SPIE 0920, Novolak Design For High Resolution Positive Photoresists(II): Stone Wall Model For Positive Photoresist Development, 0000 (1 January 1988); doi: 10.1117/12.968335
Proc. SPIE 0920, Design Of A Positive Photoresist For Submicron Imaging Assisted By SAMPLE Simulation, 0000 (1 January 1988); doi: 10.1117/12.968336
Proc. SPIE 0920, Thermally Induced And Base Catalyzed Reactions Of Naphthoquinone Diazides, 0000 (1 January 1988); doi: 10.1117/12.968337
Proc. SPIE 0920, Chemical Reactions Induced By Soft X-Ray And E-Beam Exposure Of Novolac-Based Resists, 0000 (1 January 1988); doi: 10.1117/12.968338
Proc. SPIE 0920, Determination Of Quantitative Resist Models From Experiment, 0000 (1 January 1988); doi: 10.1117/12.968339
Proc. SPIE 0920, Comparison Of Modeling And Experimental Results In Contrast Enhancement Lithography, 0000 (1 January 1988); doi: 10.1117/12.968340
Proc. SPIE 0920, Photoresist As It's Own Process Monitor, 0000 (1 January 1988); doi: 10.1117/12.968341
Proc. SPIE 0920, Studies Of Ultrathin Polymer Films For Lithographic Applications, 0000 (1 January 1988); doi: 10.1117/12.968342
Proc. SPIE 0920, Optical Lithography For Half-Micron And Sub-Half-Micron Resolution, 0000 (1 January 1988); doi: 10.1117/12.968343
Proc. SPIE 0920, Comparison Of Several Resist Linewidth Fluctuation Reduction Methods From Production Viewpoints, 0000 (1 January 1988); doi: 10.1117/12.968344
Proc. SPIE 0920, Evaluation Of Multilayer Resists For Submicron Technology, 0000 (1 January 1988); doi: 10.1117/12.968345
Back to Top