PROCEEDINGS VOLUME 0946
ADVANCES IN SEMICONDUCTORS AND SUPERCONDUCTORS: PHYSICS AND DEVICE APPLICATIONS | 14-18 MARCH 1988
Spectroscopic Characterization Techniques for Semiconductor Technology III
IN THIS VOLUME

0 Sessions, 27 Papers, 0 Presentations
All Papers  (27)
ADVANCES IN SEMICONDUCTORS AND SUPERCONDUCTORS: PHYSICS AND DEVICE APPLICATIONS
14-18 March 1988
Newport Beach, CA, United States
All Papers
Proc. SPIE 0946, Modulation Spectroscopy Of Semiconductor Microstructures: An Overview, 0000 (9 August 1988); doi: 10.1117/12.947409
Proc. SPIE 0946, Photoreflectance And Thermoreflectance Of A GaAs/Ga0.82Al0.18As Multiple Quantum Well: Mechanisms of Electromodulation, 0000 (9 August 1988); doi: 10.1117/12.947410
Proc. SPIE 0946, Photoreflectance And The Seraphin Coefficients In Quantum Well Structures, 0000 (9 August 1988); doi: 10.1117/12.947411
Proc. SPIE 0946, Surface Potential Characterization Of The Photoelectrochemical Etching System By Photoreflectance And Electroreflectance Techniques, 0000 (9 August 1988); doi: 10.1117/12.947412
Proc. SPIE 0946, Photoreflectance Study of Ion-implanted CdTe, 0000 (9 August 1988); doi: 10.1117/12.947413
Proc. SPIE 0946, Optical And Structural Characterization Of Boron Implanted GaAs, 0000 (9 August 1988); doi: 10.1117/12.947414
Proc. SPIE 0946, Effective Bandgap Shrinkage Measurement In Silicon Solar Cell By Electro-Reflectance Method, 0000 (9 August 1988); doi: 10.1117/12.947415
Proc. SPIE 0946, Analysis Of Semiconductor Materials And Structures By Spectroellipsometry, 0000 (9 August 1988); doi: 10.1117/12.947416
Proc. SPIE 0946, Optical Measurement Of Built-In And Applied Electric Fields In AlxGa1_xAs/GaAs Heterostructures, 0000 (9 August 1988); doi: 10.1117/12.947417
Proc. SPIE 0946, GaAs/AlGaAs Superlattice Characterization By Variable Angle Spectroscopic Ellipsometry, 0000 (9 August 1988); doi: 10.1117/12.947418
Proc. SPIE 0946, In Situ Optical Measurements Of The Growth Of GaAs and AlGaAs By Molecular Beam Epitaxy, 0000 (9 August 1988); doi: 10.1117/12.947419
Proc. SPIE 0946, Algorithm For LI Near Gradient Refractive Indices, 0000 (9 August 1988); doi: 10.1117/12.947420
Proc. SPIE 0946, Optical Study Of Interface Effects In TCO/Amorphous Semiconductors Systems, 0000 (9 August 1988); doi: 10.1117/12.947421
Proc. SPIE 0946, Raman Characterization Of Semiconductor Superlattices, 0000 (9 August 1988); doi: 10.1117/12.947422
Proc. SPIE 0946, Reactive Ion Etching of MBE GaAs: A Raman Scattering Study, 0000 (9 August 1988); doi: 10.1117/12.947423
Proc. SPIE 0946, Alloy Disorder Effects In Molecular Beam Epitaxically Grown AlxGa1_xAs Examined Via Raman And Rayleigh Scattering And Near Edge Luminescence, 0000 (9 August 1988); doi: 10.1117/12.947424
Proc. SPIE 0946, Characterization of MeV iOn-Implanted GainAs/GaAs Using X-Ray And Raman Techniques, 0000 (9 August 1988); doi: 10.1117/12.947425
Proc. SPIE 0946, Strain Distribution Of MBE Grown GexSi1_x/Si Layers by Raman Scattering, 0000 (9 August 1988); doi: 10.1117/12.947426
Proc. SPIE 0946, Growth-Induced Complex Defects In GaAs Grown By Molecular Beam Epitaxy, 0000 (9 August 1988); doi: 10.1117/12.947427
Proc. SPIE 0946, Photoluminescence Studies Of InGaAlAs Quaternary Alloys, 0000 (9 August 1988); doi: 10.1117/12.947428
Proc. SPIE 0946, The Recombination Mechanism Of Excited-State Acceptor-Acceptor Pairs In GaAs, 0000 (9 August 1988); doi: 10.1117/12.947429
Proc. SPIE 0946, TEM Characterization of II-VI Compound Semiconductors, 0000 (9 August 1988); doi: 10.1117/12.947430
Proc. SPIE 0946, Quantitative Depth Profiling Analysis Of (Al,Ga)As Structures By Secondary Neutral Mass Spectrometry (SNMS), 0000 (9 August 1988); doi: 10.1117/12.947431
Proc. SPIE 0946, Study Of Thin Epitaxial Film Formation By Germanium Segregation In Silicon Oxidation, 0000 (9 August 1988); doi: 10.1117/12.947432
Proc. SPIE 0946, Scanning Tunneling Spectroscopy, 0000 (9 August 1988); doi: 10.1117/12.947433
Proc. SPIE 0946, Growth Mode And Initial Stage Schottky Barrier Formation At The In/GaAs Interface: A Photoemission Study, 0000 (9 August 1988); doi: 10.1117/12.947434
Proc. SPIE 0946, Electron Spin Resonance Spectroscopy Of Defects In Low Temperature Dielectric Films, 0000 (9 August 1988); doi: 10.1117/12.947435
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