Wide Bandgap Power Devices and Applications II
Proceedings Volume 10381 is from: Logo
6-10 August 2017
San Diego, California, United States
Front Matter: Volume 10381
Proc. SPIE 10381, Front Matter: Volume 10381, 1038101 (25 October 2017); doi: 10.1117/12.2296669
Wide Bandgap Materials and Devices I
Proc. SPIE 10381, A study of the effect of surface pretreatment on atomic layer deposited Al2O3 interface with GaN, 1038103 (23 August 2017); doi: 10.1117/12.2279313
Proc. SPIE 10381, 3D analysis of thermal and electrical performance of wide bandgap VDMOSFETs, 1038104 (23 August 2017); doi: 10.1117/12.2275350
Wide Bandgap Materials and Devices II
Proc. SPIE 10381, Emission control of multilayered thin films of ZnO/CuO prepared by pulsed laser deposition (Conference Presentation), 1038105 (); doi: 10.1117/12.2275525
Proc. SPIE 10381, Development of an efficient DC-DC SEPIC converter using wide bandgap power devices for high step-up applications, 1038106 (23 August 2017); doi: 10.1117/12.2275681
Wide Bandgap Materials and Devices III
Proc. SPIE 10381, Defect-induced optical breakdown in aluminum nitride and gallium nitride epitaxial films, 1038107 (23 August 2017); doi: 10.1117/12.2277114
Proc. SPIE 10381, Comparative study of CAVET with dielectric and p-GaN gate and Mg ion-implanted current blocking layer, 1038108 (23 August 2017); doi: 10.1117/12.2279435
Proc. SPIE 10381, Highly efficient GaN HEMTs transformer-less single-phase inverter for grid-tied fuel cell, 1038109 (23 August 2017); doi: 10.1117/12.2275511
Wide Bandgap Materials and Devices IV
Proc. SPIE 10381, Oxidation of GaAs substrates to enable β-Ga2O3 films for sensors and optoelectronic devices, 103810B (21 September 2017); doi: 10.1117/12.2278843
Proc. SPIE 10381, Simulation and performance comparison of Si and SiC-based interleaved boost converter, 103810C (23 August 2017); doi: 10.1117/12.2273481
Proc. SPIE 10381, High efficiency H6 single-phase transformerless grid-tied PV inverter with proposed modulation for reactive power generation, 103810D (23 August 2017); doi: 10.1117/12.2275572
Proc. SPIE 10381, Low-crosstalk optimization in 2D segmented waveguide crossings by evolutionary algorithms, 103810E (23 August 2017); doi: 10.1117/12.2270471
Proc. SPIE 10381, III-nitride based N-polar current aperture vertical electron transistors (Conference Presentation), 103810F (); doi: 10.1117/12.2279576
Poster Session
Proc. SPIE 10381, Modeling and simulation of GaN step-up power switched capacitor converter, 103810G (23 August 2017); doi: 10.1117/12.2274174
Proc. SPIE 10381, Design and performance study of a DC-DC flyback converter based on wide bandgap power devices for photovoltaic applications, 103810H (23 August 2017); doi: 10.1117/12.2277175
Proc. SPIE 10381, Design of a high-performance cascaded boost converter with SiC power devices for photovoltaic applications, 103810I (23 August 2017); doi: 10.1117/12.2277181
Proc. SPIE 10381, Properties of reactively sputtered AlxNy thin films for pyroelectric detectors, 103810J (23 August 2017); doi: 10.1117/12.2281240
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