PROCEEDINGS VOLUME 1086
1989 SANTA CLARA SYMPOSIUM ON MICROLITHOGRAPHY | 27 FEBRUARY - 3 MARCH 1989
Advances in Resist Technology and Processing VI
IN THIS VOLUME

0 Sessions, 59 Papers, 0 Presentations
All Papers  (59)
1989 SANTA CLARA SYMPOSIUM ON MICROLITHOGRAPHY
27 February - 3 March 1989
San Jose, CA, United States
All Papers
Proc. SPIE 1086, Chemically Amplified Resists: A Lithographic Comparison of Acid Generating Species., 0000 (30 January 1989); doi: 10.1117/12.953012
Proc. SPIE 1086, Sensitive Electron Beam Resist Systems Based On Acid-Catalyzed Deprotection, 0000 (30 January 1989); doi: 10.1117/12.953013
Proc. SPIE 1086, A New Positive Resist for KrF Excimer Laser Lithography, 0000 (30 January 1989); doi: 10.1117/12.953014
Proc. SPIE 1086, Deep UV ANR Photoresists For 248 nm Excimer Laser Photolithography, 0000 (30 January 1989); doi: 10.1117/12.953015
Proc. SPIE 1086, Mechanisms Of The Dissolution Inhibition Effect And Their Application To Designing Novel Deep-UV Resists, 0000 (30 January 1989); doi: 10.1117/12.953017
Proc. SPIE 1086, A Chemical Reaction And Influence Of Deep-UV Light Wavelength On REL (Resolution Enhanced Lithography), 0000 (30 January 1989); doi: 10.1117/12.953018
Proc. SPIE 1086, Radiation Effects Of Various Ion Beams On Resists Studied By Product Analysis And New Nanosecond Ion Beam Pulse Radiolysis, 0000 (30 January 1989); doi: 10.1117/12.953019
Proc. SPIE 1086, On The Molecular Mechanism Of Positive Novolac Resists, 0000 (30 January 1989); doi: 10.1117/12.953020
Proc. SPIE 1086, Novolak Based Thermally Resistant Positive Photoresist: Resin Design and Performance, 0000 (30 January 1989); doi: 10.1117/12.953021
Proc. SPIE 1086, Improved Thermal Stability Of High Resolution Positive Photoresists Via Elevated Softbake Temperatures, 0000 (30 January 1989); doi: 10.1117/12.953022
Proc. SPIE 1086, Dissolution Rate Modifying Chemistry: Interaction of Base-soluble and Base-insoluble Non-actinic Dyes With Novolak Polymers and Novolak-based Positive Photoresists, 0000 (30 January 1989); doi: 10.1117/12.953023
Proc. SPIE 1086, Image Reversal Resist for g-line Exposure: Chemistry and Lithographic Evaluation, 0000 (30 January 1989); doi: 10.1117/12.953024
Proc. SPIE 1086, The Effect Of Sensitizer Chemistry On Decarboxylation-Type Image Reversal Systems, 0000 (30 January 1989); doi: 10.1117/12.953025
Proc. SPIE 1086, Simulation of Etching Profiles and Process Latitudes for the O2 Reactive Ion Etching Pattern Transfer Step in Multilevel Lithography, 0000 (30 January 1989); doi: 10.1117/12.953026
Proc. SPIE 1086, Silicon Oxidation During Bilayer Resist Etching, 0000 (30 January 1989); doi: 10.1117/12.953027
Proc. SPIE 1086, Polysiloxanes with a Phenol Moiety for Bilayer Photoresist Applications, 0000 (30 January 1989); doi: 10.1117/12.953028
Proc. SPIE 1086, Sub-half-micron Patterning Characteristics of Silicone-based Positive (SPP) and Negative (SNP) Resists in KrF Excimer Laser Lithography, 0000 (30 January 1989); doi: 10.1117/12.953029
Proc. SPIE 1086, Excimer Laser Exposure Characteristics Of Inorganic Resists Based On Peroxo-Polytungstic Acids, 0000 (30 January 1989); doi: 10.1117/12.953030
Proc. SPIE 1086, A Novel Photooxidative Scheme for Imaging at Polymer Surfaces, 0000 (30 January 1989); doi: 10.1117/12.953031
Proc. SPIE 1086, Dry Lithography with Deep-UV Exposure Using Silylated Resist Materials, 0000 (30 January 1989); doi: 10.1117/12.953032
Proc. SPIE 1086, Single Level Dry Developable Resist Systems, Based On Gas Phase Silylation, 0000 (30 January 1989); doi: 10.1117/12.953033
Proc. SPIE 1086, Evaporated Fatty Acid Resist Process, 0000 (30 January 1989); doi: 10.1117/12.953035
Proc. SPIE 1086, High Contrast Single Layer Resists And Antireflection Layers - An Alternative To Multilayer Resist Techniques, 0000 (30 January 1989); doi: 10.1117/12.953036
Proc. SPIE 1086, Polymer Chain Configurations In Constrained Geometries: Ultrathin Polymer Films For Microlithography, 0000 (30 January 1989); doi: 10.1117/12.953037
Proc. SPIE 1086, Modeling and Simulation of Multiple Chemical States in Photoresist Materials, 0000 (30 January 1989); doi: 10.1117/12.953038
Proc. SPIE 1086, Picosecond Electron-Beam And Synchrotron Radiation Pulse Radiolysis For Studies On Electron-Beam And X-Ray Resists, 0000 (30 January 1989); doi: 10.1117/12.953039
Proc. SPIE 1086, An Experimental Characterization System for Deep Ultra-Violet (UV) Photoresists, 0000 (30 January 1989); doi: 10.1117/12.953040
Proc. SPIE 1086, Advanced Bilayer Resist Process With Optimized PMGT Formulation, 0000 (30 January 1989); doi: 10.1117/12.953041
Proc. SPIE 1086, New Pattern Transfer Technology For G-line Lithography, 0000 (30 January 1989); doi: 10.1117/12.953042
Proc. SPIE 1086, Dry Developable Plasma Polymerized Photo-Resist System For Curved Surface Fabrication, 0000 (30 January 1989); doi: 10.1117/12.953043
Proc. SPIE 1086, Statistically Developed Single Layer Liftoff For Sputtered Films, 0000 (30 January 1989); doi: 10.1117/12.953044
Proc. SPIE 1086, Fourier Transform Infrared Analysis of Resist Process and its Application., 0000 (30 January 1989); doi: 10.1117/12.953045
Proc. SPIE 1086, Surface Characterization Of Aluminum Substrates Exposed To Photoresist Developers, 0000 (30 January 1989); doi: 10.1117/12.953046
Proc. SPIE 1086, Ultrahigh Resolution Positive Working Photoresist For Half-Micron Photolithography, 0000 (30 January 1989); doi: 10.1117/12.953047
Proc. SPIE 1086, Polyhydroxystyrene Carbonate Esters for High Sensitivity Photoresists Having Autodecomposition Temperatures > 160°, 0000 (30 January 1989); doi: 10.1117/12.953048
Proc. SPIE 1086, Photoactive Compound Structure And Resist Function: The Influence Of Chromophore Proximity, 0000 (30 January 1989); doi: 10.1117/12.953049
Proc. SPIE 1086, Novel Structures of Novolak Resins Designed to Improve Resist Alkaline Dissolution, Resolution, Thermal Resistance and Ease of Manufacturing, 0000 (30 January 1989); doi: 10.1117/12.953050
Proc. SPIE 1086, X-ray Chemical Reactions of Novolac Diazonaphthoquinone Resists, 0000 (30 January 1989); doi: 10.1117/12.953051
Proc. SPIE 1086, Positive-Working Polyimide Resists Based On Diazonaphthoquinone Photochemistry, 0000 (30 January 1989); doi: 10.1117/12.953052
Proc. SPIE 1086, Materials For Photochemical Image Enhancement With 436, 365, Or 248 nm Radiation, 0000 (30 January 1989); doi: 10.1117/12.953053
Proc. SPIE 1086, Reducing The Process "K" Factor With Surface Imaging Techniques, 0000 (30 January 1989); doi: 10.1117/12.953054
Proc. SPIE 1086, Feasibility Study of Silylation Process for Submicron Manufacturing, 0000 (30 January 1989); doi: 10.1117/12.953055
Proc. SPIE 1086, 0.6 µm CMOS Technology Using Desire Process, 0000 (30 January 1989); doi: 10.1117/12.953056
Proc. SPIE 1086, Use Of Plasmask Resist (Desire Process) On Metal II In IC Device Fabrication, 0000 (30 January 1989); doi: 10.1117/12.953057
Proc. SPIE 1086, A New Mid-UV Resist With Oxygen Plasma Resistance, 0000 (30 January 1989); doi: 10.1117/12.953058
Proc. SPIE 1086, Characterization Of Structure In Thin Polymer Resist Films, 0000 (30 January 1989); doi: 10.1117/12.953059
Proc. SPIE 1086, Characteristics Of A Developer For Spray Puddle Develop Processes, 0000 (30 January 1989); doi: 10.1117/12.953060
Proc. SPIE 1086, Positive Photoresist Development: A Multiple State Percolation Model, 0000 (30 January 1989); doi: 10.1117/12.953061
Proc. SPIE 1086, Three Dimensional Profile Simulation For Positive Photoresists, 0000 (30 January 1989); doi: 10.1117/12.953062
Proc. SPIE 1086, Characterization Of A UV Resist for 248 nm Lithography, 0000 (30 January 1989); doi: 10.1117/12.953063
Proc. SPIE 1086, A Lithographic Study of Photoresists Containing a Base Soluble Dye, 0000 (30 January 1989); doi: 10.1117/12.953064
Proc. SPIE 1086, Film Curvature Effects for Optical Resists Patterned on Topography, 0000 (30 January 1989); doi: 10.1117/12.953065
Proc. SPIE 1086, Improved Bake Latitude Organic Anti-Reflective Coatings for High Resolution Metallisation Lithography, 0000 (30 January 1989); doi: 10.1117/12.953066
Proc. SPIE 1086, Submicron Metallization Utilizing a Versatile Trilayer Resist/Liftoff Process, 0000 (30 January 1989); doi: 10.1117/12.953067
Proc. SPIE 1086, Evaluating Process Optimums for Production VLSI Lithography, 0000 (30 January 1989); doi: 10.1117/12.953068
Proc. SPIE 1086, An I-Line Image Reversal Process For Submicron Lithography, 0000 (30 January 1989); doi: 10.1117/12.953069
Proc. SPIE 1086, Advanced Image Reversal Techniques, 0000 (30 January 1989); doi: 10.1117/12.953070
Proc. SPIE 1086, Reduced Device Damage Using An Ozone Based Photoresist Removal Process, 0000 (30 January 1989); doi: 10.1117/12.953071