PROCEEDINGS VOLUME 1144
FIRST INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIAL FOR ADVANCED ELECTRONIC AND OPTICAL DEVICES | 20-22 MARCH 1989
1st Intl Conf on Indium Phosphide and Related Materials for Advanced Electronic and Optical Devices
IN THIS VOLUME

0 Sessions, 75 Papers, 0 Presentations
All Papers  (75)
FIRST INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIAL FOR ADVANCED ELECTRONIC AND OPTICAL DEVICES
20-22 March 1989
Norman, OK, United States
All Papers
Proc. SPIE 1144, Indium Phosphide - Into The Future, 0000 (28 November 1989); doi: 10.1117/12.961977
Proc. SPIE 1144, Growth Of Low-Dislocation-Density InP Single Crystals By The VCZ Method, 0000 (28 November 1989); doi: 10.1117/12.961978
Proc. SPIE 1144, Recent Developments In Gas Source Molecular Beam Epitaxy, 0000 (28 November 1989); doi: 10.1117/12.961979
Proc. SPIE 1144, Improved MBE Growth Of InGaAs-InAlAs Heterostructures For High-Performance Device Applications, 0000 (28 November 1989); doi: 10.1117/12.961981
Proc. SPIE 1144, Incorporation Of Residual Donor Impurities In High Purity Epitaxial Indium Phosphide, 0000 (28 November 1989); doi: 10.1117/12.961982
Proc. SPIE 1144, Definitive Identification Of The Fe3+/Fe2+ Level In Ga0.47In0.53As Layers, 0000 (28 November 1989); doi: 10.1117/12.961983
Proc. SPIE 1144, InP Based Ternary And Quaternary Thin Film Structures On Large Areas Grown By LP � Movpe, 0000 (28 November 1989); doi: 10.1117/12.961984
Proc. SPIE 1144, Deep Levels In InP By DLTS and TSCAP: Survey And Recent Data, 0000 (28 November 1989); doi: 10.1117/12.961985
Proc. SPIE 1144, Lattice Mismatched Heteroepitaxial Growth Of GaAs On InP bY Organometallic Vapor Phase Epitaxy., 0000 (28 November 1989); doi: 10.1117/12.961986
Proc. SPIE 1144, Spatially Resolved Photoluminescence Characterization Of Fe Doped Semi-Insulating lnP, 0000 (28 November 1989); doi: 10.1117/12.961987
Proc. SPIE 1144, Comparison Of The Growth Of InP And InAs By Atomic Layer Epitaxy, 0000 (28 November 1989); doi: 10.1117/12.961988
Proc. SPIE 1144, Altering The Composition Of GaInPAs Grown By The Hydride Technique By Introducing HC1 Downstream, 0000 (28 November 1989); doi: 10.1117/12.961989
Proc. SPIE 1144, Flow-Rate Modulation Epitaxy Of InP By Metalorganic Chemical Vapor Deposition, 0000 (28 November 1989); doi: 10.1117/12.961990
Proc. SPIE 1144, Characterization Of InP On Si Grown By MBE, 0000 (28 November 1989); doi: 10.1117/12.961991
Proc. SPIE 1144, Electron-Hole Scattering And Minority-Electron Transport In In0.53Ga0.47As, InAs, And. InP: The Role Of The Split-Off Band, 0000 (28 November 1989); doi: 10.1117/12.961992
Proc. SPIE 1144, Growth Of InGaAsP Films In A Multi-Wafer High-Speed Rotating Disk Reactor By MOCVD, 0000 (28 November 1989); doi: 10.1117/12.961993
Proc. SPIE 1144, Room-Temperature Photoreflectance Spectra Of Thin-Layer (<200A) InP Doping Superlattices, 0000 (28 November 1989); doi: 10.1117/12.961994
Proc. SPIE 1144, Pumping Requirements And Options For Molecular Beam Epitaxy And Gas Source Molecular Beam Epitaxy/Chemical Beam Epitaxy, 0000 (28 November 1989); doi: 10.1117/12.961995
Proc. SPIE 1144, High Quality InP Substrates For Advanced Electronic And Optical Devices, 0000 (28 November 1989); doi: 10.1117/12.961996
Proc. SPIE 1144, Control Of Insulator-Semiconductor Interfaces Of InP And InGaAs For Surface Passivation And Misfet Fabrication, 0000 (28 November 1989); doi: 10.1117/12.961997
Proc. SPIE 1144, High Performance Ion Implanted InP Misfets Passivated With An Anodic Oxide', 0000 (28 November 1989); doi: 10.1117/12.961998
Proc. SPIE 1144, Surface Passivation And Barrier Height Enhancement Of N-type In0.53Ga0.47As Schottky Barrier Photodiodes, 0000 (28 November 1989); doi: 10.1117/12.961999
Proc. SPIE 1144, Evidence Of A Surface Trap By DLTS Measurements On GalnAs Planar PIN Photodiodes, 0000 (28 November 1989); doi: 10.1117/12.962000
Proc. SPIE 1144, InP/Low-Temperature-Deposited SiO2 Interface, 0000 (28 November 1989); doi: 10.1117/12.962001
Proc. SPIE 1144, Low Temperature Dielectrics And Surface Passivation Of InP, 0000 (28 November 1989); doi: 10.1117/12.962002
Proc. SPIE 1144, Chemical Nature Of Encapsulant-Semiconductor Interface After Rapid Thermal Annealing For InP MISFETs, 0000 (28 November 1989); doi: 10.1117/12.962003
Proc. SPIE 1144, Interface Properties Of High Barrier Height MIS Diodes On InP, 0000 (28 November 1989); doi: 10.1117/12.962004
Proc. SPIE 1144, Hydrogenation Of InP Surface By Phosphorus-Added Hydrogen Plasma, 0000 (28 November 1989); doi: 10.1117/12.962005
Proc. SPIE 1144, MIS Structures On InP Using Oxide Deposited Near 100°C, 0000 (28 November 1989); doi: 10.1117/12.962006
Proc. SPIE 1144, Electrical Properties Of InxPNy-InP MIS Structures, 0000 (28 November 1989); doi: 10.1117/12.962007
Proc. SPIE 1144, Characterization Of InP Surfaces Using Integral Photoluminescence Measurements, 0000 (28 November 1989); doi: 10.1117/12.962008
Proc. SPIE 1144, Down Stream Pecvd Deposition Of Silicon Dioxide Films On InP With Improved Interface Properties, 0000 (28 November 1989); doi: 10.1117/12.962009
Proc. SPIE 1144, The Passivation Of InP By In (PO3)3 Condensed Phosphates For MISFET Applications, 0000 (28 November 1989); doi: 10.1117/12.962010
Proc. SPIE 1144, High Pressure Oxidation Studies Of InP And GaAs, 0000 (28 November 1989); doi: 10.1117/12.962011
Proc. SPIE 1144, Passivation Of InP Using A Surface Science Approach : THE Al2O3/As//InP CASE, 0000 (28 November 1989); doi: 10.1117/12.962012
Proc. SPIE 1144, The Sulfur Passivation Of InP And GaAs Surfaces, 0000 (28 November 1989); doi: 10.1117/12.962013
Proc. SPIE 1144, Technology And Drift Characteristics Of UVCVD-SiO2 / InP MISFET Devices, 0000 (28 November 1989); doi: 10.1117/12.962014
Proc. SPIE 1144, A New Fabrication Approach For Planar, Ion-Implanted InP JFETs, 0000 (28 November 1989); doi: 10.1117/12.962015
Proc. SPIE 1144, Annealing Conditions For Fe Doped Semi-Insulating InP, 0000 (28 November 1989); doi: 10.1117/12.962016
Proc. SPIE 1144, Pt/Ti Low Resistance Non-Alloyed Ohmic Contacts To Inp-Based Photonic Devices, 0000 (28 November 1989); doi: 10.1117/12.962017
Proc. SPIE 1144, Rapid Thermal Annealing Of S-Implanted Sent-Insulating InP, 0000 (28 November 1989); doi: 10.1117/12.962018
Proc. SPIE 1144, A Study Of Enhanced Barrier Height Gates For n-InP MESFET's, 0000 (28 November 1989); doi: 10.1117/12.962019
Proc. SPIE 1144, Barrier Ohmic Contacts To Indium Gallium Arsenide, 0000 (28 November 1989); doi: 10.1117/12.962020
Proc. SPIE 1144, A Monolithically Inletrated Receiver Front-End Comprista& Ion-Implanted Lateral Interdigitated IngaAs Pin And Inp Jfet Devices, 0000 (28 November 1989); doi: 10.1117/12.962021
Proc. SPIE 1144, Nickel In Ohmic Contacts To Indium Phosphide, 0000 (28 November 1989); doi: 10.1117/12.962022
Proc. SPIE 1144, Pseudomorphic GaInP Schottky Diode On InP, 0000 (28 November 1989); doi: 10.1117/12.962023
Proc. SPIE 1144, Monolithically Integrated Ga0.47In0.53As MISFET Inverters, 0000 (28 November 1989); doi: 10.1117/12.962024
Proc. SPIE 1144, An InP-InGaAs Light Amplifying Optical Switch, 0000 (28 November 1989); doi: 10.1117/12.962025
Proc. SPIE 1144, Wide-Wavelength InQaAs/InP PIN Photodiodes Sensitive From 0.7 To 1.55 um, 0000 (28 November 1989); doi: 10.1117/12.962026
Proc. SPIE 1144, InP/InGaAs Based Charge-Coupled Devices For MQW Spatial Light Modulator Applications, 0000 (28 November 1989); doi: 10.1117/12.962027
Proc. SPIE 1144, 1.3 µm InGaAsP/InP Flat-Surface Buried Heterostructure Laser Diode Fabricated On P-Type Substrate, 0000 (28 November 1989); doi: 10.1117/12.962028
Proc. SPIE 1144, Sensitivity Of Optoelectronic Receivers, 0000 (28 November 1989); doi: 10.1117/12.962029
Proc. SPIE 1144, The Origin And Effects Of Carrier Leakage In GaInAsP/InP Lasers, 0000 (28 November 1989); doi: 10.1117/12.962030
Proc. SPIE 1144, New LED In Synthesized InP Yb Material, 0000 (28 November 1989); doi: 10.1117/12.962031
Proc. SPIE 1144, Progress In Indium Phosphide Solar Cell Research, 0000 (28 November 1989); doi: 10.1117/12.962032
Proc. SPIE 1144, Epitaxial InP And Related III-V Compounds Applied To Solar Cells, 0000 (28 November 1989); doi: 10.1117/12.962034
Proc. SPIE 1144, Indium Phosphide Solar Cells Made By Closed-Ampoule Diffusion Of Sulphur Into Cadmium-Doped Inp Substrates: Dependence Of Cell Characteristics On Diffusion Temperature And Time, 0000 (28 November 1989); doi: 10.1117/12.962035
Proc. SPIE 1144, A Review Of ITO/InP Solar Cells, 0000 (28 November 1989); doi: 10.1117/12.962036
Proc. SPIE 1144, Aspects Of Processing Indium Tin Oxide/Inp Solar Cells, 0000 (28 November 1989); do