PROCEEDINGS VOLUME 1188
1989 MICROELECTRONIC INTEGRATED PROCESSING CONFERENCES | 10-13 OCTOBER 1989
Multichamber and In-Situ Processing of Electronic Materials
IN THIS VOLUME

0 Sessions, 20 Papers, 0 Presentations
All Papers  (20)
1989 MICROELECTRONIC INTEGRATED PROCESSING CONFERENCES
10-13 October 1989
Santa Clara, United States
All Papers
Proc. SPIE 1188, Multi-Chamber Deposition System And Its Application To Vlsi Manufacturing Process, 0000 (15 February 1990); doi: 10.1117/12.963933
Proc. SPIE 1188, Multichamber And In-Situ Processing System Design And Control, 0000 (15 February 1990); doi: 10.1117/12.963934
Proc. SPIE 1188, Vacuum Mechatronics And Insvection For Self-Contained Manufacturing, 0000 (15 February 1990); doi: 10.1117/12.963935
Proc. SPIE 1188, Ni Substrate Processing Using In-Vacuo Wafer Transfer To Integrate Surface Characterization, Surface Cleaning, And Ni-Cu Epitaxial Alloy Growth, 0000 (15 February 1990); doi: 10.1117/12.963936
Proc. SPIE 1188, A Multichamber Integrated-Processing UHV System For The Formation Of Silicon Heterostructures On Three-Inch Wafers, 0000 (15 February 1990); doi: 10.1117/12.963937
Proc. SPIE 1188, Process Integration: The Future of Chipmaking, 0000 (15 February 1990); doi: 10.1117/12.963938
Proc. SPIE 1188, Effects Of Multichamber Processing On Reliability Of Submicron Vias, 0000 (15 February 1990); doi: 10.1117/12.963939
Proc. SPIE 1188, In Situ Planarization Of Dielectric Surfaces Using Boron Oxide, 0000 (15 February 1990); doi: 10.1117/12.963940
Proc. SPIE 1188, Characterization Of A Multiple-Step In-Situ Plasma Enhanced Chemical Vapor Deposition (PECVD) Tetraethylorthosilicate (TEOS) Planarization Scheme For Submicron Manufacturing, 0000 (15 February 1990); doi: 10.1117/12.963941
Proc. SPIE 1188, Cluster Processing For 16-Mb DRAM Production, 0000 (15 February 1990); doi: 10.1117/12.963942
Proc. SPIE 1188, In-Situ Cluster Processing For Advanced Semiconductor Technologies, 0000 (15 February 1990); doi: 10.1117/12.963943
Proc. SPIE 1188, Recent Applications Of Finely Focused Eb/Ib Tecindlogies For Multichamber And In-Situ Processing, 0000 (15 February 1990); doi: 10.1117/12.963944
Proc. SPIE 1188, Effects Of HCl Gas And Hydrogen Mixture Etching On In Situ Cleaning Of GaAs Substrates In Molecular Beam Epitaxy, 0000 (15 February 1990); doi: 10.1117/12.963945
Proc. SPIE 1188, Contamination Of Remote Plasma Processes Upon Addition Of Hydrogen As A Downstream Reagent Gas, 0000 (15 February 1990); doi: 10.1117/12.963946
Proc. SPIE 1188, Electron Beam Excited GaAs Maskless Etching Using C12 Nozzle Installed FIB/EB Combined System, 0000 (15 February 1990); doi: 10.1117/12.963947
Proc. SPIE 1188, Formation Of Silicon-Based Heterostructures In Multichamber Integrated-Processing Thin-Film Deposition Systems, 0000 (15 February 1990); doi: 10.1117/12.963948
Proc. SPIE 1188, AEMPES: An Expert System For In-Situ Diagnostics And Process Monitoring, 0000 (15 February 1990); doi: 10.1117/12.963949
Proc. SPIE 1188, In-Situ Spectroscopic Ellipsometry Investigation Of Ion Beam Damage: A Kinetic Study, 0000 (15 February 1990); doi: 10.1117/12.963950
Proc. SPIE 1188, Design Of A New In Situ Spectroscopic Phase Modulated Ellipsometer, 0000 (15 February 1990); doi: 10.1117/12.963951
Proc. SPIE 1188, Optical Emission Spectroscopy For In-Situ Diagnostics In RIBE And RIE: Velocity Selective Detection Of Particles In Broad Ion Beams And A New Method For Etch Rate And Endpoint Determination, 0000 (15 February 1990); doi: 10.1117/12.963952
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